Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films
We have fabricated ZrO 2 thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible I – V curves can be obtained for the device Cu/ZrO 2 /ATO which is measured at room temperature (300 K). During the RESET operation, R L and R H values can be controlled by the RESET volt...
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| Veröffentlicht in: | Bulletin of materials science 2014-05, Vol.37 (3), p.455-460 |
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| creator | Li, Ying Zhao, Gaoyang Su, Jian Shen, Erfeng Ren, Yang |
| description | We have fabricated ZrO
2
thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible
I
–
V
curves can be obtained for the device Cu/ZrO
2
/ATO which is measured at room temperature (300 K). During the RESET operation,
R
L
and
R
H
values can be controlled by the RESET voltage. Moreover, the Cu/ZrO
2
/ATO device which the ZrO
2
thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of
R
off
/
R
on
reduced when the measured temperature decreased. When the
I
–
V
measurement temperature decreases,
R
on
decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO
2
films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated. |
| doi_str_mv | 10.1007/s12034-014-0708-8 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1541678649</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3357577291</sourcerecordid><originalsourceid>FETCH-LOGICAL-c359t-38095addde0d86fdcbb7c3b10435d89030f6625fb7dfc7044481c315cd2d1ba03</originalsourceid><addsrcrecordid>eNp1UDtPwzAQthBIlMIPYLPEHDjHTuyMqOIlIXUpC4vl-NG6SpNgO0X997gqAwvD6U73Pe70IXRL4J4A8IdISqCsAJKLgyjEGZpBw2nB67o5z3NZQcE48Et0FeMWgDSMkRnyK7sbbVBpChb73nWT7bXFqjc42GgT3g9dUmuLY5rMAQ8Ot34cOhWOsI_J7zP07ZPe-H6NW7tRez9MIVvhz7Asccp77Hy3i9fowqku2pvfPkcfz0-rxWvxvnx5Wzy-F5pWTSqogKZSxhgLRtTO6LblmrYEGK2MaICCq-uyci03TnNgjAmiKam0KQ1pFdA5ujv5jmH4mmxMcpsf6vNJSSpGai5q1mQWObF0GGIM1skx-J0KB0lAHhOVp0RlTlQeE5Uia8qTJmZuv7bhj_O_oh9lEXps</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1541678649</pqid></control><display><type>article</type><title>Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films</title><source>Indian Academy of Sciences</source><source>Springer Nature - Complete Springer Journals</source><source>EZB-FREE-00999 freely available EZB journals</source><source>ProQuest Central UK/Ireland</source><source>Free Full-Text Journals in Chemistry</source><source>ProQuest Central</source><creator>Li, Ying ; Zhao, Gaoyang ; Su, Jian ; Shen, Erfeng ; Ren, Yang</creator><creatorcontrib>Li, Ying ; Zhao, Gaoyang ; Su, Jian ; Shen, Erfeng ; Ren, Yang</creatorcontrib><description>We have fabricated ZrO
2
thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible
I
–
V
curves can be obtained for the device Cu/ZrO
2
/ATO which is measured at room temperature (300 K). During the RESET operation,
R
L
and
R
H
values can be controlled by the RESET voltage. Moreover, the Cu/ZrO
2
/ATO device which the ZrO
2
thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of
R
off
/
R
on
reduced when the measured temperature decreased. When the
I
–
V
measurement temperature decreases,
R
on
decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO
2
films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.</description><identifier>ISSN: 0250-4707</identifier><identifier>EISSN: 0973-7669</identifier><identifier>DOI: 10.1007/s12034-014-0708-8</identifier><language>eng</language><publisher>India: Springer India</publisher><subject>Annealing ; Chemistry and Materials Science ; Copper ; Electric potential ; Engineering ; Materials Science ; Room temperature ; Sol-gel processes ; Switching ; Thin films ; Voltage ; Zirconium dioxide</subject><ispartof>Bulletin of materials science, 2014-05, Vol.37 (3), p.455-460</ispartof><rights>Indian Academy of Sciences 2014</rights><rights>Indian Academy of Sciences 2014.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c359t-38095addde0d86fdcbb7c3b10435d89030f6625fb7dfc7044481c315cd2d1ba03</citedby><cites>FETCH-LOGICAL-c359t-38095addde0d86fdcbb7c3b10435d89030f6625fb7dfc7044481c315cd2d1ba03</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/1541678649/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/1541678649?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,776,780,21368,27903,27904,33723,41467,42536,43784,51298,64362,64366,72216,74049</link.rule.ids></links><search><creatorcontrib>Li, Ying</creatorcontrib><creatorcontrib>Zhao, Gaoyang</creatorcontrib><creatorcontrib>Su, Jian</creatorcontrib><creatorcontrib>Shen, Erfeng</creatorcontrib><creatorcontrib>Ren, Yang</creatorcontrib><title>Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films</title><title>Bulletin of materials science</title><addtitle>Bull Mater Sci</addtitle><description>We have fabricated ZrO
2
thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible
I
–
V
curves can be obtained for the device Cu/ZrO
2
/ATO which is measured at room temperature (300 K). During the RESET operation,
R
L
and
R
H
values can be controlled by the RESET voltage. Moreover, the Cu/ZrO
2
/ATO device which the ZrO
2
thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of
R
off
/
R
on
reduced when the measured temperature decreased. When the
I
–
V
measurement temperature decreases,
R
on
decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO
2
films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.</description><subject>Annealing</subject><subject>Chemistry and Materials Science</subject><subject>Copper</subject><subject>Electric potential</subject><subject>Engineering</subject><subject>Materials Science</subject><subject>Room temperature</subject><subject>Sol-gel processes</subject><subject>Switching</subject><subject>Thin films</subject><subject>Voltage</subject><subject>Zirconium dioxide</subject><issn>0250-4707</issn><issn>0973-7669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp1UDtPwzAQthBIlMIPYLPEHDjHTuyMqOIlIXUpC4vl-NG6SpNgO0X997gqAwvD6U73Pe70IXRL4J4A8IdISqCsAJKLgyjEGZpBw2nB67o5z3NZQcE48Et0FeMWgDSMkRnyK7sbbVBpChb73nWT7bXFqjc42GgT3g9dUmuLY5rMAQ8Ot34cOhWOsI_J7zP07ZPe-H6NW7tRez9MIVvhz7Asccp77Hy3i9fowqku2pvfPkcfz0-rxWvxvnx5Wzy-F5pWTSqogKZSxhgLRtTO6LblmrYEGK2MaICCq-uyci03TnNgjAmiKam0KQ1pFdA5ujv5jmH4mmxMcpsf6vNJSSpGai5q1mQWObF0GGIM1skx-J0KB0lAHhOVp0RlTlQeE5Uia8qTJmZuv7bhj_O_oh9lEXps</recordid><startdate>20140501</startdate><enddate>20140501</enddate><creator>Li, Ying</creator><creator>Zhao, Gaoyang</creator><creator>Su, Jian</creator><creator>Shen, Erfeng</creator><creator>Ren, Yang</creator><general>Springer India</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20140501</creationdate><title>Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films</title><author>Li, Ying ; Zhao, Gaoyang ; Su, Jian ; Shen, Erfeng ; Ren, Yang</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c359t-38095addde0d86fdcbb7c3b10435d89030f6625fb7dfc7044481c315cd2d1ba03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Annealing</topic><topic>Chemistry and Materials Science</topic><topic>Copper</topic><topic>Electric potential</topic><topic>Engineering</topic><topic>Materials Science</topic><topic>Room temperature</topic><topic>Sol-gel processes</topic><topic>Switching</topic><topic>Thin films</topic><topic>Voltage</topic><topic>Zirconium dioxide</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Li, Ying</creatorcontrib><creatorcontrib>Zhao, Gaoyang</creatorcontrib><creatorcontrib>Su, Jian</creatorcontrib><creatorcontrib>Shen, Erfeng</creatorcontrib><creatorcontrib>Ren, Yang</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><jtitle>Bulletin of materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Li, Ying</au><au>Zhao, Gaoyang</au><au>Su, Jian</au><au>Shen, Erfeng</au><au>Ren, Yang</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films</atitle><jtitle>Bulletin of materials science</jtitle><stitle>Bull Mater Sci</stitle><date>2014-05-01</date><risdate>2014</risdate><volume>37</volume><issue>3</issue><spage>455</spage><epage>460</epage><pages>455-460</pages><issn>0250-4707</issn><eissn>0973-7669</eissn><abstract>We have fabricated ZrO
2
thin films by sol–gel deposition and annealed them at 300, 500 and 700 °C. Reproducible
I
–
V
curves can be obtained for the device Cu/ZrO
2
/ATO which is measured at room temperature (300 K). During the RESET operation,
R
L
and
R
H
values can be controlled by the RESET voltage. Moreover, the Cu/ZrO
2
/ATO device which the ZrO
2
thin film annealed at 300 °C can be measured as resistive switching sweeps at 200, 100 and 50 K. It was found that the ratio of
R
off
/
R
on
reduced when the measured temperature decreased. When the
I
–
V
measurement temperature decreases,
R
on
decreases obviously which is typical for electronic transportation in a Cu metal. It is indicated that the Cu metallic conduction filament has been formed in the ZrO
2
films. Besides, the microstructure by high resolution transmission electrical microscopy (HRTEM) was also investigated.</abstract><cop>India</cop><pub>Springer India</pub><doi>10.1007/s12034-014-0708-8</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0250-4707 |
| ispartof | Bulletin of materials science, 2014-05, Vol.37 (3), p.455-460 |
| issn | 0250-4707 0973-7669 |
| language | eng |
| recordid | cdi_proquest_journals_1541678649 |
| source | Indian Academy of Sciences; Springer Nature - Complete Springer Journals; EZB-FREE-00999 freely available EZB journals; ProQuest Central UK/Ireland; Free Full-Text Journals in Chemistry; ProQuest Central |
| subjects | Annealing Chemistry and Materials Science Copper Electric potential Engineering Materials Science Room temperature Sol-gel processes Switching Thin films Voltage Zirconium dioxide |
| title | Temperature influence and reset voltage study of bipolar resistive switching behaviour in ZrO2 thin films |
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