Different Directions of Switching of Chromium Oxide Thin Films
We have investigated the switching behavior of as-deposited CrO x and post-annealed CrO y films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among...
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| Veröffentlicht in: | Journal of electronic materials 2014-07, Vol.43 (7), p.2747-2753 |
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| creator | Pham, Ngoc Kim Nguyen, Do Trung Dao, Bang Tam Thi Ta, Kieu Hanh Thi Tran, Vinh Cao Nguyen, Van Hieu Kim, Sang Sub Maenosono, Shinya Phan, Thang Bach |
| description | We have investigated the switching behavior of as-deposited CrO
x
and post-annealed CrO
y
films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/Pt device only; no resistance switching was observed for Ag/CrO
y
/Pt, Ti/CrO
x
/Pt, and Ti/CrO
y
/Pt devices. Among FTO devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/FTO device whereas
I
–
V
hysteresis with the opposite switching direction was observed for Ag/CrO
y
/FTO, Ti/CrO
x
/FTO, and Ti/CrO
y
/FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO
x
films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO
y
films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO
y
/Pt device but promoted short-range movement of O
2−
ions through the bottom interface, resulting in resistance switching in the Ag/CrO
y
/FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations. |
| doi_str_mv | 10.1007/s11664-014-3193-3 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1530378786</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3319558731</sourcerecordid><originalsourceid>FETCH-LOGICAL-c346t-1793ab101db5c760a14f844a5555596e5caed0082d87f55d00d99a36ea26e6903</originalsourceid><addsrcrecordid>eNp1UE1LAzEQDaJgrf4AbwviMTqz2WSzF0Faq0KhByt4C2k2aVPa3ZpsUf-9u24RL85lvt57MzxCLhFuECC_jYhCZBQwowwLRtkRGSDPGEUp3o7JAJhAylPGT8lZjGsA5ChxQO7G3jkbbNUkYx-saXxdxaR2ycuHb8zKV8uuGa1CvfX7bTL79KVN5u08mfjNNp6TE6c30V4c8pC8Th7moyc6nT0-j-6n1LBMNBTzgukFApYLbnIBGjMns0zzLgphudG2BJBpKXPHeVuWRaGZsDoVVhTAhuSq192F-n1vY6PW9T5U7UmFnAHLZS5Fi8IeZUIdY7BO7YLf6vClEFRnk-ptUq1NqrNJsZZzfVDW0eiNC7oyPv4SU8kl4I922uNiu6qWNvz54F_xb2pxdVw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1530378786</pqid></control><display><type>article</type><title>Different Directions of Switching of Chromium Oxide Thin Films</title><source>SpringerLink Journals - AutoHoldings</source><creator>Pham, Ngoc Kim ; Nguyen, Do Trung ; Dao, Bang Tam Thi ; Ta, Kieu Hanh Thi ; Tran, Vinh Cao ; Nguyen, Van Hieu ; Kim, Sang Sub ; Maenosono, Shinya ; Phan, Thang Bach</creator><creatorcontrib>Pham, Ngoc Kim ; Nguyen, Do Trung ; Dao, Bang Tam Thi ; Ta, Kieu Hanh Thi ; Tran, Vinh Cao ; Nguyen, Van Hieu ; Kim, Sang Sub ; Maenosono, Shinya ; Phan, Thang Bach</creatorcontrib><description>We have investigated the switching behavior of as-deposited CrO
x
and post-annealed CrO
y
films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/Pt device only; no resistance switching was observed for Ag/CrO
y
/Pt, Ti/CrO
x
/Pt, and Ti/CrO
y
/Pt devices. Among FTO devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/FTO device whereas
I
–
V
hysteresis with the opposite switching direction was observed for Ag/CrO
y
/FTO, Ti/CrO
x
/FTO, and Ti/CrO
y
/FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO
x
films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO
y
films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO
y
/Pt device but promoted short-range movement of O
2−
ions through the bottom interface, resulting in resistance switching in the Ag/CrO
y
/FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-014-3193-3</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Annealing ; Applied sciences ; Characterization and Evaluation of Materials ; Chemical compounds ; Chemistry ; Chemistry and Materials Science ; Condensed matter: structure, mechanical and thermal properties ; Defects and impurities in crystals; microstructure ; Electrochemistry ; Electrodes: preparations and properties ; Electronics ; Electronics and Microelectronics ; Exact sciences and technology ; General and physical chemistry ; Grain and twin boundaries ; Heat treatment ; Instrumentation ; Linear defects: dislocations, disclinations ; Materials Science ; Metals. Metallurgy ; Optical and Electronic Materials ; Physics ; Production techniques ; Solid State Physics ; Structure of solids and liquids; crystallography ; Thin films</subject><ispartof>Journal of electronic materials, 2014-07, Vol.43 (7), p.2747-2753</ispartof><rights>TMS 2014</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-1793ab101db5c760a14f844a5555596e5caed0082d87f55d00d99a36ea26e6903</citedby><cites>FETCH-LOGICAL-c346t-1793ab101db5c760a14f844a5555596e5caed0082d87f55d00d99a36ea26e6903</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-014-3193-3$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-014-3193-3$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27922,27923,41486,42555,51317</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28580186$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Pham, Ngoc Kim</creatorcontrib><creatorcontrib>Nguyen, Do Trung</creatorcontrib><creatorcontrib>Dao, Bang Tam Thi</creatorcontrib><creatorcontrib>Ta, Kieu Hanh Thi</creatorcontrib><creatorcontrib>Tran, Vinh Cao</creatorcontrib><creatorcontrib>Nguyen, Van Hieu</creatorcontrib><creatorcontrib>Kim, Sang Sub</creatorcontrib><creatorcontrib>Maenosono, Shinya</creatorcontrib><creatorcontrib>Phan, Thang Bach</creatorcontrib><title>Different Directions of Switching of Chromium Oxide Thin Films</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>We have investigated the switching behavior of as-deposited CrO
x
and post-annealed CrO
y
films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/Pt device only; no resistance switching was observed for Ag/CrO
y
/Pt, Ti/CrO
x
/Pt, and Ti/CrO
y
/Pt devices. Among FTO devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/FTO device whereas
I
–
V
hysteresis with the opposite switching direction was observed for Ag/CrO
y
/FTO, Ti/CrO
x
/FTO, and Ti/CrO
y
/FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO
x
films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO
y
films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO
y
/Pt device but promoted short-range movement of O
2−
ions through the bottom interface, resulting in resistance switching in the Ag/CrO
y
/FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemical compounds</subject><subject>Chemistry</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Defects and impurities in crystals; microstructure</subject><subject>Electrochemistry</subject><subject>Electrodes: preparations and properties</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>General and physical chemistry</subject><subject>Grain and twin boundaries</subject><subject>Heat treatment</subject><subject>Instrumentation</subject><subject>Linear defects: dislocations, disclinations</subject><subject>Materials Science</subject><subject>Metals. Metallurgy</subject><subject>Optical and Electronic Materials</subject><subject>Physics</subject><subject>Production techniques</subject><subject>Solid State Physics</subject><subject>Structure of solids and liquids; crystallography</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1UE1LAzEQDaJgrf4AbwviMTqz2WSzF0Faq0KhByt4C2k2aVPa3ZpsUf-9u24RL85lvt57MzxCLhFuECC_jYhCZBQwowwLRtkRGSDPGEUp3o7JAJhAylPGT8lZjGsA5ChxQO7G3jkbbNUkYx-saXxdxaR2ycuHb8zKV8uuGa1CvfX7bTL79KVN5u08mfjNNp6TE6c30V4c8pC8Th7moyc6nT0-j-6n1LBMNBTzgukFApYLbnIBGjMns0zzLgphudG2BJBpKXPHeVuWRaGZsDoVVhTAhuSq192F-n1vY6PW9T5U7UmFnAHLZS5Fi8IeZUIdY7BO7YLf6vClEFRnk-ptUq1NqrNJsZZzfVDW0eiNC7oyPv4SU8kl4I922uNiu6qWNvz54F_xb2pxdVw</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Pham, Ngoc Kim</creator><creator>Nguyen, Do Trung</creator><creator>Dao, Bang Tam Thi</creator><creator>Ta, Kieu Hanh Thi</creator><creator>Tran, Vinh Cao</creator><creator>Nguyen, Van Hieu</creator><creator>Kim, Sang Sub</creator><creator>Maenosono, Shinya</creator><creator>Phan, Thang Bach</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20140701</creationdate><title>Different Directions of Switching of Chromium Oxide Thin Films</title><author>Pham, Ngoc Kim ; Nguyen, Do Trung ; Dao, Bang Tam Thi ; Ta, Kieu Hanh Thi ; Tran, Vinh Cao ; Nguyen, Van Hieu ; Kim, Sang Sub ; Maenosono, Shinya ; Phan, Thang Bach</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-1793ab101db5c760a14f844a5555596e5caed0082d87f55d00d99a36ea26e6903</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemical compounds</topic><topic>Chemistry</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: structure, mechanical and thermal properties</topic><topic>Defects and impurities in crystals; microstructure</topic><topic>Electrochemistry</topic><topic>Electrodes: preparations and properties</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>Exact sciences and technology</topic><topic>General and physical chemistry</topic><topic>Grain and twin boundaries</topic><topic>Heat treatment</topic><topic>Instrumentation</topic><topic>Linear defects: dislocations, disclinations</topic><topic>Materials Science</topic><topic>Metals. Metallurgy</topic><topic>Optical and Electronic Materials</topic><topic>Physics</topic><topic>Production techniques</topic><topic>Solid State Physics</topic><topic>Structure of solids and liquids; crystallography</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pham, Ngoc Kim</creatorcontrib><creatorcontrib>Nguyen, Do Trung</creatorcontrib><creatorcontrib>Dao, Bang Tam Thi</creatorcontrib><creatorcontrib>Ta, Kieu Hanh Thi</creatorcontrib><creatorcontrib>Tran, Vinh Cao</creatorcontrib><creatorcontrib>Nguyen, Van Hieu</creatorcontrib><creatorcontrib>Kim, Sang Sub</creatorcontrib><creatorcontrib>Maenosono, Shinya</creatorcontrib><creatorcontrib>Phan, Thang Bach</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pham, Ngoc Kim</au><au>Nguyen, Do Trung</au><au>Dao, Bang Tam Thi</au><au>Ta, Kieu Hanh Thi</au><au>Tran, Vinh Cao</au><au>Nguyen, Van Hieu</au><au>Kim, Sang Sub</au><au>Maenosono, Shinya</au><au>Phan, Thang Bach</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Different Directions of Switching of Chromium Oxide Thin Films</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2014-07-01</date><risdate>2014</risdate><volume>43</volume><issue>7</issue><spage>2747</spage><epage>2753</epage><pages>2747-2753</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>We have investigated the switching behavior of as-deposited CrO
x
and post-annealed CrO
y
films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/Pt device only; no resistance switching was observed for Ag/CrO
y
/Pt, Ti/CrO
x
/Pt, and Ti/CrO
y
/Pt devices. Among FTO devices,
I
–
V
hysteresis was observed for the Ag/CrO
x
/FTO device whereas
I
–
V
hysteresis with the opposite switching direction was observed for Ag/CrO
y
/FTO, Ti/CrO
x
/FTO, and Ti/CrO
y
/FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO
x
films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO
y
films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO
y
/Pt device but promoted short-range movement of O
2−
ions through the bottom interface, resulting in resistance switching in the Ag/CrO
y
/FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-014-3193-3</doi><tpages>7</tpages></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of electronic materials, 2014-07, Vol.43 (7), p.2747-2753 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_1530378786 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Annealing Applied sciences Characterization and Evaluation of Materials Chemical compounds Chemistry Chemistry and Materials Science Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Electrochemistry Electrodes: preparations and properties Electronics Electronics and Microelectronics Exact sciences and technology General and physical chemistry Grain and twin boundaries Heat treatment Instrumentation Linear defects: dislocations, disclinations Materials Science Metals. Metallurgy Optical and Electronic Materials Physics Production techniques Solid State Physics Structure of solids and liquids crystallography Thin films |
| title | Different Directions of Switching of Chromium Oxide Thin Films |
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