Different Directions of Switching of Chromium Oxide Thin Films

We have investigated the switching behavior of as-deposited CrO x and post-annealed CrO y films by use of a variety of electrodes (top electrode Ag, Ti; bottom electrode Pt, fluorine tin oxide (FTO)). Resistance switching is highly dependent on electrode material and post-annealing treatment. Among Pt devices, I – V hysteresis was observed for the Ag/CrO x /Pt device only; no resistance switching was observed for Ag/CrO y /Pt, Ti/CrO x /Pt, and Ti/CrO y /Pt devices. Among FTO devices, I – V hysteresis was observed for the Ag/CrO x /FTO device whereas I – V hysteresis with the opposite switching direction was observed for Ag/CrO y /FTO, Ti/CrO x /FTO, and Ti/CrO y /FTO devices. The direction of switching depends not only on electrode material but also on post-annealing treatment, which affects the density of grain boundaries. Thus, the density of grain boundaries determines the type of charge carrier involved in the switching process. For as-deposited CrO x films with a high density of grain boundaries Ag filament paths mediated by electrochemical redox reaction were observed, irrespective of bottom electrode material (Pt or FTO). Post-annealed CrO y films with a low density of grain boundaries suppressed electrochemical redox reaction in the Ag/CrO y /Pt device but promoted short-range movement of O 2− ions through the bottom interface, resulting in resistance switching in the Ag/CrO y /FTO device. Electrochemical redox reaction-controlled resistance switching occurred solely in oxides with a high density of grain boundaries or dislocations.