Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals
A P-doped ZnO surface layer on undoped ZnO wafers was prepared by phosphorus (P) ion implantation. Hall effect measurement revealed p -type conduction in such layers annealed at 800°C. This indicates that acceptor levels are present in P-doped ZnO, even though the ZnO is still n -type. Micro-Raman s...
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| creator | Jeong, T. S. Yu, J. H. Mo, H. S. Kim, T. S. Lim, K. Y. Youn, C. J. Hong, K. J. Kim, H. S. |
| description | A P-doped ZnO surface layer on undoped ZnO wafers was prepared by phosphorus (P) ion implantation. Hall effect measurement revealed
p
-type conduction in such layers annealed at 800°C. This indicates that acceptor levels are present in P-doped ZnO, even though the ZnO is still
n
-type. Micro-Raman scattering in −
z
(
xy
)
z
geometry was conducted on P-implanted ZnO. The
E
2
high
mode shift observed toward the high-energy region was related to compressive stress as a result of P-ion implantation. This compressive stress led to the appearance of an
A
1
(LO) peak, which is an inactive mode. This
A
1
(LO) peak relaxed during thermal annealing in ambient oxygen at temperatures higher than 700°C. The P2p
3/2
peak observed at 135.6 eV by x-ray photoelectron spectroscopy is associated with chemical bond formation leading to 2(P
2
O
5
) molecules. This indicates that implanted P ions substituted Zn sites in the ZnO layer. In photoluminescence spectroscopy, the P-related peaks observed at energies ranging between 3.1 and 3.5 eV originated from (A
0
, X) emission, because of P
Zn
-2V
Zn
complexes acting as shallow acceptors. The acceptor level was observed to be 126.9 meV above the valence band edge. Observation of this P-related emission indicates that ion implantation results in acceptor levels in the P-doped ZnO layer. This suggests that the P
2
O
5
bonds are responsible for the
p
-type activity of P-implanted ZnO. |
| doi_str_mv | 10.1007/s11664-014-3136-z |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1530378693</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3319558611</sourcerecordid><originalsourceid>FETCH-LOGICAL-c346t-3d718e9b70ba9505d5c86314c9df938cefe6287fa48c21576f5ed84d8c2f903a3</originalsourceid><addsrcrecordid>eNp1kE9LAzEQxYMoWKsfwFtAPEYzm002eyzFP4VCPVQULyHNJt0t2-yabA_tp3fLFvHi6THM770ZHkK3QB-A0uwxAgiREgopYcAEOZyhEfCUEZDi8xyNKBNAeML4JbqKcUMpcJAwQh9PzlnT4cbhZWnDVtd44r3VdeXXuPG4Ky2eljpo09lQxa4y8ci-lU1syybsIplt21r7zhb4yy_wNOxjp-t4jS5cL_bmpGP0_vy0nL6S-eJlNp3MiWGp6AgrMpA2X2V0pXNOecGNFAxSkxcuZ9JYZ0UiM6dTaRLgmXDcFjIt-snllGk2RndDbhua752Nndo0u-D7kwo4oyyTImc9BQNlQhNjsE61odrqsFdA1bE_NfSn-v7UsT916D33p2Qdja5d0N5U8deYSC4pZLLnkoGL_cqvbfjzwb_hPwx5gGI</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1530378693</pqid></control><display><type>article</type><title>Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals</title><source>SpringerNature Journals</source><creator>Jeong, T. S. ; Yu, J. H. ; Mo, H. S. ; Kim, T. S. ; Lim, K. Y. ; Youn, C. J. ; Hong, K. J. ; Kim, H. S.</creator><creatorcontrib>Jeong, T. S. ; Yu, J. H. ; Mo, H. S. ; Kim, T. S. ; Lim, K. Y. ; Youn, C. J. ; Hong, K. J. ; Kim, H. S.</creatorcontrib><description>A P-doped ZnO surface layer on undoped ZnO wafers was prepared by phosphorus (P) ion implantation. Hall effect measurement revealed
p
-type conduction in such layers annealed at 800°C. This indicates that acceptor levels are present in P-doped ZnO, even though the ZnO is still
n
-type. Micro-Raman scattering in −
z
(
xy
)
z
geometry was conducted on P-implanted ZnO. The
E
2
high
mode shift observed toward the high-energy region was related to compressive stress as a result of P-ion implantation. This compressive stress led to the appearance of an
A
1
(LO) peak, which is an inactive mode. This
A
1
(LO) peak relaxed during thermal annealing in ambient oxygen at temperatures higher than 700°C. The P2p
3/2
peak observed at 135.6 eV by x-ray photoelectron spectroscopy is associated with chemical bond formation leading to 2(P
2
O
5
) molecules. This indicates that implanted P ions substituted Zn sites in the ZnO layer. In photoluminescence spectroscopy, the P-related peaks observed at energies ranging between 3.1 and 3.5 eV originated from (A
0
, X) emission, because of P
Zn
-2V
Zn
complexes acting as shallow acceptors. The acceptor level was observed to be 126.9 meV above the valence band edge. Observation of this P-related emission indicates that ion implantation results in acceptor levels in the P-doped ZnO layer. This suggests that the P
2
O
5
bonds are responsible for the
p
-type activity of P-implanted ZnO.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-014-3136-z</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Annealing ; Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Conductivity phenomena in semiconductors and insulators ; Electronic transport in condensed matter ; Electronics ; Electronics and Microelectronics ; Exact sciences and technology ; Galvanomagnetic and other magnetotransport effects ; Instrumentation ; Materials Science ; Optical and Electronic Materials ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Optoelectronic devices ; Phosphorus ; Photoluminescence ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Solid State Physics ; Zinc oxides</subject><ispartof>Journal of electronic materials, 2014-07, Vol.43 (7), p.2688-2693</ispartof><rights>TMS 2014</rights><rights>2015 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c346t-3d718e9b70ba9505d5c86314c9df938cefe6287fa48c21576f5ed84d8c2f903a3</citedby><cites>FETCH-LOGICAL-c346t-3d718e9b70ba9505d5c86314c9df938cefe6287fa48c21576f5ed84d8c2f903a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-014-3136-z$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-014-3136-z$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>315,781,785,27929,27930,41493,42562,51324</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28580178$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Jeong, T. S.</creatorcontrib><creatorcontrib>Yu, J. H.</creatorcontrib><creatorcontrib>Mo, H. S.</creatorcontrib><creatorcontrib>Kim, T. S.</creatorcontrib><creatorcontrib>Lim, K. Y.</creatorcontrib><creatorcontrib>Youn, C. J.</creatorcontrib><creatorcontrib>Hong, K. J.</creatorcontrib><creatorcontrib>Kim, H. S.</creatorcontrib><title>Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>A P-doped ZnO surface layer on undoped ZnO wafers was prepared by phosphorus (P) ion implantation. Hall effect measurement revealed
p
-type conduction in such layers annealed at 800°C. This indicates that acceptor levels are present in P-doped ZnO, even though the ZnO is still
n
-type. Micro-Raman scattering in −
z
(
xy
)
z
geometry was conducted on P-implanted ZnO. The
E
2
high
mode shift observed toward the high-energy region was related to compressive stress as a result of P-ion implantation. This compressive stress led to the appearance of an
A
1
(LO) peak, which is an inactive mode. This
A
1
(LO) peak relaxed during thermal annealing in ambient oxygen at temperatures higher than 700°C. The P2p
3/2
peak observed at 135.6 eV by x-ray photoelectron spectroscopy is associated with chemical bond formation leading to 2(P
2
O
5
) molecules. This indicates that implanted P ions substituted Zn sites in the ZnO layer. In photoluminescence spectroscopy, the P-related peaks observed at energies ranging between 3.1 and 3.5 eV originated from (A
0
, X) emission, because of P
Zn
-2V
Zn
complexes acting as shallow acceptors. The acceptor level was observed to be 126.9 meV above the valence band edge. Observation of this P-related emission indicates that ion implantation results in acceptor levels in the P-doped ZnO layer. This suggests that the P
2
O
5
bonds are responsible for the
p
-type activity of P-implanted ZnO.</description><subject>Annealing</subject><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Conductivity phenomena in semiconductors and insulators</subject><subject>Electronic transport in condensed matter</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>Galvanomagnetic and other magnetotransport effects</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Optoelectronic devices</subject><subject>Phosphorus</subject><subject>Photoluminescence</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Solid State Physics</subject><subject>Zinc oxides</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp1kE9LAzEQxYMoWKsfwFtAPEYzm002eyzFP4VCPVQULyHNJt0t2-yabA_tp3fLFvHi6THM770ZHkK3QB-A0uwxAgiREgopYcAEOZyhEfCUEZDi8xyNKBNAeML4JbqKcUMpcJAwQh9PzlnT4cbhZWnDVtd44r3VdeXXuPG4Ky2eljpo09lQxa4y8ci-lU1syybsIplt21r7zhb4yy_wNOxjp-t4jS5cL_bmpGP0_vy0nL6S-eJlNp3MiWGp6AgrMpA2X2V0pXNOecGNFAxSkxcuZ9JYZ0UiM6dTaRLgmXDcFjIt-snllGk2RndDbhua752Nndo0u-D7kwo4oyyTImc9BQNlQhNjsE61odrqsFdA1bE_NfSn-v7UsT916D33p2Qdja5d0N5U8deYSC4pZLLnkoGL_cqvbfjzwb_hPwx5gGI</recordid><startdate>20140701</startdate><enddate>20140701</enddate><creator>Jeong, T. S.</creator><creator>Yu, J. H.</creator><creator>Mo, H. S.</creator><creator>Kim, T. S.</creator><creator>Lim, K. Y.</creator><creator>Youn, C. J.</creator><creator>Hong, K. J.</creator><creator>Kim, H. S.</creator><general>Springer US</general><general>Springer</general><general>Springer Nature B.V</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope></search><sort><creationdate>20140701</creationdate><title>Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals</title><author>Jeong, T. S. ; Yu, J. H. ; Mo, H. S. ; Kim, T. S. ; Lim, K. Y. ; Youn, C. J. ; Hong, K. J. ; Kim, H. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c346t-3d718e9b70ba9505d5c86314c9df938cefe6287fa48c21576f5ed84d8c2f903a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Annealing</topic><topic>Applied sciences</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Conductivity phenomena in semiconductors and insulators</topic><topic>Electronic transport in condensed matter</topic><topic>Electronics</topic><topic>Electronics and Microelectronics</topic><topic>Exact sciences and technology</topic><topic>Galvanomagnetic and other magnetotransport effects</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Optoelectronic devices</topic><topic>Phosphorus</topic><topic>Photoluminescence</topic><topic>Physics</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Solid State Physics</topic><topic>Zinc oxides</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Jeong, T. S.</creatorcontrib><creatorcontrib>Yu, J. H.</creatorcontrib><creatorcontrib>Mo, H. S.</creatorcontrib><creatorcontrib>Kim, T. S.</creatorcontrib><creatorcontrib>Lim, K. Y.</creatorcontrib><creatorcontrib>Youn, C. J.</creatorcontrib><creatorcontrib>Hong, K. J.</creatorcontrib><creatorcontrib>Kim, H. S.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>STEM Database</collection><collection>ProQuest Pharma Collection</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Research Library (Alumni Edition)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>Research Library Prep</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>ProQuest Engineering Collection</collection><collection>Research Library</collection><collection>Science Database</collection><collection>Engineering Database</collection><collection>Research Library (Corporate)</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><collection>ProQuest Central Basic</collection><collection>SIRS Editorial</collection><jtitle>Journal of electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Jeong, T. S.</au><au>Yu, J. H.</au><au>Mo, H. S.</au><au>Kim, T. S.</au><au>Lim, K. Y.</au><au>Youn, C. J.</au><au>Hong, K. J.</au><au>Kim, H. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2014-07-01</date><risdate>2014</risdate><volume>43</volume><issue>7</issue><spage>2688</spage><epage>2693</epage><pages>2688-2693</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><coden>JECMA5</coden><abstract>A P-doped ZnO surface layer on undoped ZnO wafers was prepared by phosphorus (P) ion implantation. Hall effect measurement revealed
p
-type conduction in such layers annealed at 800°C. This indicates that acceptor levels are present in P-doped ZnO, even though the ZnO is still
n
-type. Micro-Raman scattering in −
z
(
xy
)
z
geometry was conducted on P-implanted ZnO. The
E
2
high
mode shift observed toward the high-energy region was related to compressive stress as a result of P-ion implantation. This compressive stress led to the appearance of an
A
1
(LO) peak, which is an inactive mode. This
A
1
(LO) peak relaxed during thermal annealing in ambient oxygen at temperatures higher than 700°C. The P2p
3/2
peak observed at 135.6 eV by x-ray photoelectron spectroscopy is associated with chemical bond formation leading to 2(P
2
O
5
) molecules. This indicates that implanted P ions substituted Zn sites in the ZnO layer. In photoluminescence spectroscopy, the P-related peaks observed at energies ranging between 3.1 and 3.5 eV originated from (A
0
, X) emission, because of P
Zn
-2V
Zn
complexes acting as shallow acceptors. The acceptor level was observed to be 126.9 meV above the valence band edge. Observation of this P-related emission indicates that ion implantation results in acceptor levels in the P-doped ZnO layer. This suggests that the P
2
O
5
bonds are responsible for the
p
-type activity of P-implanted ZnO.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-014-3136-z</doi><tpages>6</tpages></addata></record> |
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| ispartof | Journal of electronic materials, 2014-07, Vol.43 (7), p.2688-2693 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_proquest_journals_1530378693 |
| source | SpringerNature Journals |
| subjects | Annealing Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Condensed matter: electronic structure, electrical, magnetic, and optical properties Conductivity phenomena in semiconductors and insulators Electronic transport in condensed matter Electronics Electronics and Microelectronics Exact sciences and technology Galvanomagnetic and other magnetotransport effects Instrumentation Materials Science Optical and Electronic Materials Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Optoelectronic devices Phosphorus Photoluminescence Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Zinc oxides |
| title | Effect of Thermal Annealing on the Characteristics of Phosphorus-Implanted ZnO Crystals |
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