Germanium Gate PhotoMOSFET Integrated to Silicon Photonics
This paper presents a novel germanium gated NMOS phototransistor integrated on a silicon photonics platform on silicon-on-insulator (SOI) substrate. The phototransistor is fabricated with a modified NMOS process flow, with germanium which is recrystallized using rapid melt growth during the source/d...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2014-07, Vol.20 (4), p.1-7 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Going, Ryan W. Loo, Jodi Tsu-Jae King Liu Wu, Ming C. |
| description | This paper presents a novel germanium gated NMOS phototransistor integrated on a silicon photonics platform on silicon-on-insulator (SOI) substrate. The phototransistor is fabricated with a modified NMOS process flow, with germanium which is recrystallized using rapid melt growth during the source/drain activation anneal step. The resulting device, with 1-μm channel length, and 8-μm channel width, demonstrates a responsivity of over 18 A/W at 1550 nm with 583 nW of incident light. By increasing the incident power to 912 μW, the device operates at 2.5 GHz. Miniaturization is expected to improve both responsivity and speed in future devices. |
| doi_str_mv | 10.1109/JSTQE.2013.2294470 |
| format | Article |
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The phototransistor is fabricated with a modified NMOS process flow, with germanium which is recrystallized using rapid melt growth during the source/drain activation anneal step. The resulting device, with 1-μm channel length, and 8-μm channel width, demonstrates a responsivity of over 18 A/W at 1550 nm with 583 nW of incident light. By increasing the incident power to 912 μW, the device operates at 2.5 GHz. Miniaturization is expected to improve both responsivity and speed in future devices.</description><identifier>ISSN: 1077-260X</identifier><identifier>EISSN: 1558-4542</identifier><identifier>DOI: 10.1109/JSTQE.2013.2294470</identifier><identifier>CODEN: IJSQEN</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Capacitance ; Channels ; Germanium ; Logic gates ; optical interconnections ; optical waveguide components ; Optical waveguides ; optoelectronic devices ; photodetectors ; Photodiodes ; Phototransistors ; Silicon ; Transistors</subject><ispartof>IEEE journal of selected topics in quantum electronics, 2014-07, Vol.20 (4), p.1-7</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jul/Aug 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c421t-69eec7d87d6300124ec9ed9753ec4cd86d7ac6b8e6028ab7d4dfca493649d2933</citedby><cites>FETCH-LOGICAL-c421t-69eec7d87d6300124ec9ed9753ec4cd86d7ac6b8e6028ab7d4dfca493649d2933</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6680616$$EHTML$$P50$$Gieee$$Hfree_for_read</linktohtml><link.rule.ids>315,781,785,797,27929,27930,54763</link.rule.ids></links><search><creatorcontrib>Going, Ryan W.</creatorcontrib><creatorcontrib>Loo, Jodi</creatorcontrib><creatorcontrib>Tsu-Jae King Liu</creatorcontrib><creatorcontrib>Wu, Ming C.</creatorcontrib><title>Germanium Gate PhotoMOSFET Integrated to Silicon Photonics</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>This paper presents a novel germanium gated NMOS phototransistor integrated on a silicon photonics platform on silicon-on-insulator (SOI) substrate. 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Miniaturization is expected to improve both responsivity and speed in future devices.</description><subject>Capacitance</subject><subject>Channels</subject><subject>Germanium</subject><subject>Logic gates</subject><subject>optical interconnections</subject><subject>optical waveguide components</subject><subject>Optical waveguides</subject><subject>optoelectronic devices</subject><subject>photodetectors</subject><subject>Photodiodes</subject><subject>Phototransistors</subject><subject>Silicon</subject><subject>Transistors</subject><issn>1077-260X</issn><issn>1558-4542</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>ESBDL</sourceid><sourceid>RIE</sourceid><recordid>eNpdkE1PwzAMhiMEEmPwB-BSiQuXDidNk5QbmsYYGhpoQ-IWZYkHnfoxmvbAvyejEwdOtqznta2HkEsKI0ohu31arl4nIwY0GTGWcS7hiAxomqqYp5wdhx6kjJmA91Ny5v0WABRXMCB3U2xKU-VdGU1Ni9HLZ93Wz4vlw2QVzaoWP5owdVFbR8u8yG1d9USVW39OTjam8HhxqEPyFlLjx3i-mM7G9_PYckbbWGSIVjolnUgAKONoM3SZTBO03DolnDRWrBUKYMqspeNuYw3PEsEzx7IkGZKbfu-uqb869K0uc2-xKEyFdec1TUEkQqVUBPT6H7qtu6YK3wUqnIZUMh4o1lO2qb1vcKN3TV6a5ltT0Hud-len3uvUB50hdNWHckT8CwihQITDP3Srb54</recordid><startdate>201407</startdate><enddate>201407</enddate><creator>Going, Ryan W.</creator><creator>Loo, Jodi</creator><creator>Tsu-Jae King Liu</creator><creator>Wu, Ming C.</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| ispartof | IEEE journal of selected topics in quantum electronics, 2014-07, Vol.20 (4), p.1-7 |
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| language | eng |
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| subjects | Capacitance Channels Germanium Logic gates optical interconnections optical waveguide components Optical waveguides optoelectronic devices photodetectors Photodiodes Phototransistors Silicon Transistors |
| title | Germanium Gate PhotoMOSFET Integrated to Silicon Photonics |
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