A 3-D Stackable Maskless Embedded Metal-Gate Thin-Film-Transistor Nanowire for Use in Bioelectronic Probing
Using a self-aligned sidewall microcrystalline-silicon (μc-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate d...
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Veröffentlicht in: | IEEE transactions on electron devices 2014-03, Vol.61 (3), p.897-901 |
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creator | Chen, Min-Cheng Lin, Chang-Hsien Lin, Chia-Yi Chen, Hsiao-Chain Lee, Ta-Hsien Hua, Mu-Yi Qiu, Jian-Tai Ho, Chiahua Yang, Fu-Liang |
description | Using a self-aligned sidewall microcrystalline-silicon (μc-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μc-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications. |
doi_str_mv | 10.1109/TED.2014.2298462 |
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The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μc-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.</description><identifier>ISSN: 0018-9383</identifier><identifier>EISSN: 1557-9646</identifier><identifier>DOI: 10.1109/TED.2014.2298462</identifier><identifier>CODEN: IETDAI</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Back end of line (BEOL) technology ; Bioelectricity ; Biotechnology ; Channels ; Devices ; Educational institutions ; field-effect transistor (FET) ; lab on chip ; Logic gates ; Nanobioscience ; Nanoscale devices ; nanosensor fabrication ; nanowire semiconductive sensors ; Nanowires ; Oxides ; Reliability ; Sensitivity ; Sensors ; Silicon ; Thin films ; Three dimensional</subject><ispartof>IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.897-901</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Mar 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c277t-f7b1b618d105275c66952b31020fab3ce4b3404db26759880f34a0c3f1606e463</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6740855$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27926,27927,54760</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6740855$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Chen, Min-Cheng</creatorcontrib><creatorcontrib>Lin, Chang-Hsien</creatorcontrib><creatorcontrib>Lin, Chia-Yi</creatorcontrib><creatorcontrib>Chen, Hsiao-Chain</creatorcontrib><creatorcontrib>Lee, Ta-Hsien</creatorcontrib><creatorcontrib>Hua, Mu-Yi</creatorcontrib><creatorcontrib>Qiu, Jian-Tai</creatorcontrib><creatorcontrib>Ho, Chiahua</creatorcontrib><creatorcontrib>Yang, Fu-Liang</creatorcontrib><title>A 3-D Stackable Maskless Embedded Metal-Gate Thin-Film-Transistor Nanowire for Use in Bioelectronic Probing</title><title>IEEE transactions on electron devices</title><addtitle>TED</addtitle><description>Using a self-aligned sidewall microcrystalline-silicon (μc-Si) dual channel, comprising a sub-50-nm channel width, a novel 3-D stackable maskless embedded metal-gate thin-film-transistor nanowire device was fabricated on top metal using a tungsten gate-stack and trilayered oxide/nitride/oxide gate dielectric. The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μc-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.</description><subject>Back end of line (BEOL) technology</subject><subject>Bioelectricity</subject><subject>Biotechnology</subject><subject>Channels</subject><subject>Devices</subject><subject>Educational institutions</subject><subject>field-effect transistor (FET)</subject><subject>lab on chip</subject><subject>Logic gates</subject><subject>Nanobioscience</subject><subject>Nanoscale devices</subject><subject>nanosensor fabrication</subject><subject>nanowire semiconductive sensors</subject><subject>Nanowires</subject><subject>Oxides</subject><subject>Reliability</subject><subject>Sensitivity</subject><subject>Sensors</subject><subject>Silicon</subject><subject>Thin films</subject><subject>Three dimensional</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkMlKBDEURYMo2A57wU3AjZu0mVO1dGgHcALbdUhSrzR2dUWTasS_t6TFhavHhXMvj4PQAaNTxmh9Mp9dTDllcsp5XUnNN9CEKWVIraXeRBNKWUVqUYlttFPK2xi1lHyCFqdYkAv8NLiwcL4DfOfKooNS8GzpoWmgwXcwuI5cuQHw_DX25DJ2SzLPri-xDCnje9enz5gBt2N4LoBjj89igg7CkFMfA37Mycf-ZQ9tta4rsP97d9Hz5Wx-fk1uH65uzk9vSeDGDKQ1nnnNqoZRxY0KWteKe8Eop63zIoD0QlLZeK6NqquKtkI6GkTLNNUgtdhFx-vd95w-VlAGu4wlQNe5HtKqWKYrZYxWNRvRo3_oW1rlfvzOMkU118rUYqTomgo5lZKhte85Ll3-sozaH_t2tG9_7Ntf-2PlcF2JAPCHayNppZT4BvAbfgQ</recordid><startdate>20140301</startdate><enddate>20140301</enddate><creator>Chen, Min-Cheng</creator><creator>Lin, Chang-Hsien</creator><creator>Lin, Chia-Yi</creator><creator>Chen, Hsiao-Chain</creator><creator>Lee, Ta-Hsien</creator><creator>Hua, Mu-Yi</creator><creator>Qiu, Jian-Tai</creator><creator>Ho, Chiahua</creator><creator>Yang, Fu-Liang</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The results of using a charge-transferring mechanism based on the solution-phased pH of a phosphate buffer solution and vascular endothelial growth factor showed that μc-Si surfaces exhibit high potential for use in bioelectronics. The device exhibits long-term reliability regarding bioelectronic probing and is as reliable as the commercially available enzyme-linked immunosorbent assay when conducting a targeted, 100-day therapy for ovarian cancer. Thus, the proposed device exhibits potential for use in label-free, economical, and highly reliable lab-on-chip 3-D applications.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/TED.2014.2298462</doi><tpages>5</tpages></addata></record> |
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subjects | Back end of line (BEOL) technology Bioelectricity Biotechnology Channels Devices Educational institutions field-effect transistor (FET) lab on chip Logic gates Nanobioscience Nanoscale devices nanosensor fabrication nanowire semiconductive sensors Nanowires Oxides Reliability Sensitivity Sensors Silicon Thin films Three dimensional |
title | A 3-D Stackable Maskless Embedded Metal-Gate Thin-Film-Transistor Nanowire for Use in Bioelectronic Probing |
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