A Novel a-InGaZnO TFT Pixel Circuit for AMOLED Display With the Enhanced Reliability and Aperture Ratio
In this paper, a novel voltage-programmed pixel circuit based on amorphous indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting diode (AMOLED) displays with the enhanced aperture ratio is proposed. The proposed circuit consists of 5 TFTs and one cap...
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| Veröffentlicht in: | Journal of display technology 2014-01, Vol.10 (1), p.80-83 |
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| container_title | Journal of display technology |
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| creator | Kim, Yeonkyung Kim, Yongchan Lee, Hojin |
| description | In this paper, a novel voltage-programmed pixel circuit based on amorphous indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting diode (AMOLED) displays with the enhanced aperture ratio is proposed. The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit. |
| doi_str_mv | 10.1109/JDT.2013.2280026 |
| format | Article |
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The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit.</description><identifier>ISSN: 1551-319X</identifier><identifier>EISSN: 1558-9323</identifier><identifier>DOI: 10.1109/JDT.2013.2280026</identifier><identifier>CODEN: IJDTAL</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>a-InGaZnO TFT ; Active matrix displays ; Active matrix organic light emitting diodes ; Active-matrix organic light-emitting diode (AMOLED) ; Apertures ; Capacitors ; Circuits ; Logic gates ; Organic light emitting diodes ; oxide ; Pixels ; Semiconductor devices ; Stress ; Thin film transistors ; Threshold voltage ; voltage-programmed pixel circuit</subject><ispartof>Journal of display technology, 2014-01, Vol.10 (1), p.80-83</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Jan 2014</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-2e6abb3ae0214fa661e712ebf71c6abfcade231bf0eb8dd1b6cd756396e3c2f63</citedby><cites>FETCH-LOGICAL-c324t-2e6abb3ae0214fa661e712ebf71c6abfcade231bf0eb8dd1b6cd756396e3c2f63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6587793$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>315,781,785,797,27928,27929,54762</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6587793$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Kim, Yeonkyung</creatorcontrib><creatorcontrib>Kim, Yongchan</creatorcontrib><creatorcontrib>Lee, Hojin</creatorcontrib><title>A Novel a-InGaZnO TFT Pixel Circuit for AMOLED Display With the Enhanced Reliability and Aperture Ratio</title><title>Journal of display technology</title><addtitle>JDT</addtitle><description>In this paper, a novel voltage-programmed pixel circuit based on amorphous indium-gallium-zinc-oxide thin film transistor (a-InGaZnO TFT) for active-matrix organic light-emitting diode (AMOLED) displays with the enhanced aperture ratio is proposed. The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit.</description><subject>a-InGaZnO TFT</subject><subject>Active matrix displays</subject><subject>Active matrix organic light emitting diodes</subject><subject>Active-matrix organic light-emitting diode (AMOLED)</subject><subject>Apertures</subject><subject>Capacitors</subject><subject>Circuits</subject><subject>Logic gates</subject><subject>Organic light emitting diodes</subject><subject>oxide</subject><subject>Pixels</subject><subject>Semiconductor devices</subject><subject>Stress</subject><subject>Thin film transistors</subject><subject>Threshold voltage</subject><subject>voltage-programmed pixel circuit</subject><issn>1551-319X</issn><issn>1558-9323</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkE1Lw0AQhhdRsFbvgpcFL15S9yPZJMfSLyvVSokoXsJmM7FbYhJ3N2L_vaktHjzNMPO8w_AgdEnJgFIS396PkwEjlA8Yiwhh4gj1aBBEXswZP_7tqcdp_HqKzqzdEMIjEYkeeh_ix_oLSiy9eTWTb9USJ9MEP-nvbjbSRrXa4aI2ePiwXEzGeKxtU8otftFujd0a8KRay0pBjldQapnpUrstllWOhw0Y1xrAK-l0fY5OCllauDjUPnqeTpLRnbdYzuaj4cJTnPnOYyBklnEJhFG_kEJQCCmDrAip6jaFkjkwTrOCQBblOc2EysNA8FgAV6wQvI9u9ncbU3-2YF36oa2CspQV1K1NacBIzCPukw69_odu6tZU3XcdRfzAD3i8o8ieUqa21kCRNkZ_SLNNKUl35tPOfLoznx7Md5GrfUQDwB8ugigMY85_ADvpfeA</recordid><startdate>201401</startdate><enddate>201401</enddate><creator>Kim, Yeonkyung</creator><creator>Kim, Yongchan</creator><creator>Lee, Hojin</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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The proposed circuit consists of 5 TFTs and one capacitor. Through extensive simulation and layout works, we verified the proposed circuit compensates for the variation of the threshold voltage in a variety of harsh stress conditions. In addition, by removing one storage capacitor and one signal line, the proposed circuit can increase the aperture ratio as well as decrease the complexity of circuit operation in comparison to the conventional pixel circuit.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/JDT.2013.2280026</doi><tpages>4</tpages></addata></record> |
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| identifier | ISSN: 1551-319X |
| ispartof | Journal of display technology, 2014-01, Vol.10 (1), p.80-83 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| subjects | a-InGaZnO TFT Active matrix displays Active matrix organic light emitting diodes Active-matrix organic light-emitting diode (AMOLED) Apertures Capacitors Circuits Logic gates Organic light emitting diodes oxide Pixels Semiconductor devices Stress Thin film transistors Threshold voltage voltage-programmed pixel circuit |
| title | A Novel a-InGaZnO TFT Pixel Circuit for AMOLED Display With the Enhanced Reliability and Aperture Ratio |
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