Mechanism of PLD using Ga-Zn Liquid Alloy Target for Zn-doped GaN Growth

The pulsed laser deposition (PLD) of GaN with Zn-dopant was closely investigated. The particular emphasis was placed on the PLD target consisting of liquid alloy of Ga and Zn. Throughout the work, an ArF excimer laser (193-nm wavelength and 20-ns duration) was used. Both Ga and Zn atoms could be sim...

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Veröffentlicht in:	Denki Gakkai ronbunshi. A, Kiso zairyÅ 2004, Vol.124(9), pp.823-826
Hauptverfasser:	Fujii, Tatsuhiko, Kiso, Masaya, Masuyama, Yoichiro, Kobayashi, Takeshi
Format:	Artikel
Sprache:	eng
Schlagworte:	doping Zn GaN PL pulsed laser deposition
Online-Zugang:	Volltext
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