Influence of Electrochemical Etching Current Density on Porous Si Luminescence Properties and Microstructure

A porous silicon layer (PSL) was prepared on single-crystal p-type Si (100) wafers with electrochemical etching in HF solutions at different current densities to explore the effect of current density on the PSL luminescence properties and microstructure. Luminesence was evaluated by measuring photol...

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Veröffentlicht in:	Hyōmen gijutsu 1996/11/01, Vol.47(11), pp.949-956
Hauptverfasser:	SHIGYO, Kazuhiro, SEO, Masahiro, AZUMI, Kazuhisa, TAKAHASHI, Hideaki
Format:	Artikel
Sprache:	eng ; jpn
Schlagworte:	Current Density Electrochemical Etching Luminescence Property Microstructure Porous Silicon
Online-Zugang:	Volltext
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