Diamond Deposition from the System CO-H2 and the Effect of O2 and CO2 Additive

Diamond was deposited in both film and particle form by microwave plasma CVD from a CO-H2 system at a power input of 220W, an H2 flow of 100cm3/min., and a pressure of 3.3kPa. O2 and CO2 were used as additive gases. In deposition without additives, the rate reached a maximun at 50cm3 CO/min., while...

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Veröffentlicht in:	Hyōmen gijutsu 1989/08/01, Vol.40(8), pp.916-921
Hauptverfasser:	CHEN, Chia-Fu, HUANG, Yen C, HOSOMI, Satoru
Format:	Artikel
Sprache:	eng
Schlagworte:	Crystals Morphology Diamond Seed Crystals Growth Growth Rate Microwave Plasma CVD Size Distribution
Online-Zugang:	Volltext
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