Fabrication of sub-100 nm Patterns using Near-field Mask Lithography with Ultra-thin Resist Process

A resist pattern of half-pitch (hp) 50 nm, 120 nm deep was fabricated with near-field lithography (NFL) of i-line ( = 365 nm) using a positive-tone chemically amplified resist and a tri-layer resist process developed for NFL. The experimental results were in close agreement with the numerical result...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2005, Vol.18(3), pp.435-441
Hauptverfasser:	Ito, Toshiki, Ogino, Masaya, Yamanaka, Tomohiro, Inao, Yasuhisa, Yamaguchi, Takako, Mizutani, Natsuhiko, Kuroda, Ryo
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemically amplified resist Dry etching Electro-magnetic analysis Near-field light Photolithography Tri-layer resist process
Online-Zugang:	Volltext
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