Gas Phase Synthesis of Diamond Films
Many attempts to synthesize diamond films have been made recently because of the high potentiality for various applications. The films were produced by a variety of methods, including thermal chemical vapor deposition (CVD) using a hot tungsten filament, plasma CVD and photo-induced CVD. Among these...
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Veröffentlicht in: | Rēzā kenkyū 1988/10/28, Vol.16(10), pp.645-653 |
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creator | GOTOH, Yoshiyuki YAGI, Toshinori NAGAI, Haruhiko |
description | Many attempts to synthesize diamond films have been made recently because of the high potentiality for various applications. The films were produced by a variety of methods, including thermal chemical vapor deposition (CVD) using a hot tungsten filament, plasma CVD and photo-induced CVD. Among these techniques, photo-induced CVD seems promising for the deposition of microelectronic materials at low temperatures. This paper reviews the properties of diamond, its evaluation methods and the progress in the synthesis of diamond by gas-phase deposition. Detailed descriptions are presented on the laser-induced CVD developed by us, in which diamond films are deposited on Si wafers by decomposing a gaseous mixture of CCl4 and H2 with an Ar F excimer laser. The structures of the deposited films were characterized by Raman scattering and reflection electron diffraction analysis. The experimental results obtained from an optical emission spectroscopic study and the reaction mechanism are discussed. |
doi_str_mv | 10.2184/lsj.16.645 |
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The films were produced by a variety of methods, including thermal chemical vapor deposition (CVD) using a hot tungsten filament, plasma CVD and photo-induced CVD. Among these techniques, photo-induced CVD seems promising for the deposition of microelectronic materials at low temperatures. This paper reviews the properties of diamond, its evaluation methods and the progress in the synthesis of diamond by gas-phase deposition. Detailed descriptions are presented on the laser-induced CVD developed by us, in which diamond films are deposited on Si wafers by decomposing a gaseous mixture of CCl4 and H2 with an Ar F excimer laser. The structures of the deposited films were characterized by Raman scattering and reflection electron diffraction analysis. The experimental results obtained from an optical emission spectroscopic study and the reaction mechanism are discussed.</description><identifier>ISSN: 0387-0200</identifier><identifier>EISSN: 1349-6603</identifier><identifier>DOI: 10.2184/lsj.16.645</identifier><language>eng</language><publisher>Suita: The Laser Society of Japan</publisher><subject>Chemical vapor deposition ; Diamond film ; Diamond synthesis ; Emission spectra ; Excimer laser</subject><ispartof>The Review of Laser Engineering, 1988/10/28, Vol.16(10), pp.645-653</ispartof><rights>The Laser Society of Japan</rights><rights>Copyright Japan Science and Technology Agency 1988</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,4024,27923,27924,27925</link.rule.ids></links><search><creatorcontrib>GOTOH, Yoshiyuki</creatorcontrib><creatorcontrib>YAGI, Toshinori</creatorcontrib><creatorcontrib>NAGAI, Haruhiko</creatorcontrib><title>Gas Phase Synthesis of Diamond Films</title><title>Rēzā kenkyū</title><addtitle>rle</addtitle><description>Many attempts to synthesize diamond films have been made recently because of the high potentiality for various applications. The films were produced by a variety of methods, including thermal chemical vapor deposition (CVD) using a hot tungsten filament, plasma CVD and photo-induced CVD. Among these techniques, photo-induced CVD seems promising for the deposition of microelectronic materials at low temperatures. This paper reviews the properties of diamond, its evaluation methods and the progress in the synthesis of diamond by gas-phase deposition. Detailed descriptions are presented on the laser-induced CVD developed by us, in which diamond films are deposited on Si wafers by decomposing a gaseous mixture of CCl4 and H2 with an Ar F excimer laser. The structures of the deposited films were characterized by Raman scattering and reflection electron diffraction analysis. The experimental results obtained from an optical emission spectroscopic study and the reaction mechanism are discussed.</description><subject>Chemical vapor deposition</subject><subject>Diamond film</subject><subject>Diamond synthesis</subject><subject>Emission spectra</subject><subject>Excimer laser</subject><issn>0387-0200</issn><issn>1349-6603</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1988</creationdate><recordtype>article</recordtype><recordid>eNo9kE1Lw0AQhhdRsFYv_oKAnoTU2cxmP45S2yoUFNTzstlsbEKa1N300H_fLZFeZg7zvPPCQ8g9hVlGJXtuQzOjfMZZfkEmFJlKOQe8JBNAKVLIAK7JTQgNAEMBYkIeVyYknxsTXPJ16IaNC3VI-ip5rc2278pkWbfbcEuuKtMGd_e_p-Rnufiev6Xrj9X7_GWd2liep8yhVKCQCsxNQXNeSKNoCUZZmwlTAqJFgZmjGcoCi0Ly0ghVSWVLxQuLU_Iw_t35_m_vwqCbfu-7WKkpE1zmTPE8Uk8jZX0fgneV3vl6a_xBU9AnCzpa0JTraCHCixFuwmB-3Rk1fqht604oVQJPeEyPM-bOd7sxXrsOj8mGZUE</recordid><startdate>1988</startdate><enddate>1988</enddate><creator>GOTOH, Yoshiyuki</creator><creator>YAGI, Toshinori</creator><creator>NAGAI, Haruhiko</creator><general>The Laser Society of Japan</general><general>Laser Society of Japan</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>1988</creationdate><title>Gas Phase Synthesis of Diamond Films</title><author>GOTOH, Yoshiyuki ; YAGI, Toshinori ; NAGAI, Haruhiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2185-4e3890931735ab156b8a91d0a9cc27ad033c3732e1238b3bb86da79f89cd96bc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1988</creationdate><topic>Chemical vapor deposition</topic><topic>Diamond film</topic><topic>Diamond synthesis</topic><topic>Emission spectra</topic><topic>Excimer laser</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>GOTOH, Yoshiyuki</creatorcontrib><creatorcontrib>YAGI, Toshinori</creatorcontrib><creatorcontrib>NAGAI, Haruhiko</creatorcontrib><collection>CrossRef</collection><jtitle>Rēzā kenkyū</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>GOTOH, Yoshiyuki</au><au>YAGI, Toshinori</au><au>NAGAI, Haruhiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gas Phase Synthesis of Diamond Films</atitle><jtitle>Rēzā kenkyū</jtitle><addtitle>rle</addtitle><date>1988</date><risdate>1988</risdate><volume>16</volume><issue>10</issue><spage>645</spage><epage>653</epage><pages>645-653</pages><issn>0387-0200</issn><eissn>1349-6603</eissn><abstract>Many attempts to synthesize diamond films have been made recently because of the high potentiality for various applications. The films were produced by a variety of methods, including thermal chemical vapor deposition (CVD) using a hot tungsten filament, plasma CVD and photo-induced CVD. Among these techniques, photo-induced CVD seems promising for the deposition of microelectronic materials at low temperatures. This paper reviews the properties of diamond, its evaluation methods and the progress in the synthesis of diamond by gas-phase deposition. Detailed descriptions are presented on the laser-induced CVD developed by us, in which diamond films are deposited on Si wafers by decomposing a gaseous mixture of CCl4 and H2 with an Ar F excimer laser. The structures of the deposited films were characterized by Raman scattering and reflection electron diffraction analysis. The experimental results obtained from an optical emission spectroscopic study and the reaction mechanism are discussed.</abstract><cop>Suita</cop><pub>The Laser Society of Japan</pub><doi>10.2184/lsj.16.645</doi><tpages>9</tpages><oa>free_for_read</oa></addata></record> |
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identifier | ISSN: 0387-0200 |
ispartof | The Review of Laser Engineering, 1988/10/28, Vol.16(10), pp.645-653 |
issn | 0387-0200 1349-6603 |
language | eng |
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source | EZB-FREE-00999 freely available EZB journals |
subjects | Chemical vapor deposition Diamond film Diamond synthesis Emission spectra Excimer laser |
title | Gas Phase Synthesis of Diamond Films |
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