Unexpected Room-Temperature Ferromagnetism in Nanostructured Bi2Te3

There is an urgent need for the development in the field of the magnetism of topological insulators, owing to the necessity for the realization of the quantum anomalous Hall effect. Herein, we discuss experimentally fabricated nanostructured hierarchical architectures of the topological insulator Bi...

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Veröffentlicht in:Angewandte Chemie International Edition 2014-01, Vol.53 (3), p.729-733
Hauptverfasser: Xiao, Guanjun, Zhu, Chunye, Ma, Yanming, Liu, Bingbing, Zou, Guangtian, Zou, Bo
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creator Xiao, Guanjun
Zhu, Chunye
Ma, Yanming
Liu, Bingbing
Zou, Guangtian
Zou, Bo
description There is an urgent need for the development in the field of the magnetism of topological insulators, owing to the necessity for the realization of the quantum anomalous Hall effect. Herein, we discuss experimentally fabricated nanostructured hierarchical architectures of the topological insulator Bi2Te3 without the introduction of any exotic magnetic dopants, in which intriguing room‐temperature ferromagnetism was identified. First‐principles calculations demonstrated that the intrinsic point defect with respect to the antisite Te site is responsible for the creation of a magnetic moment. Such a mechanism, which is different from that of a vacancy defect, provides new insights into the origins of magnetism. Our findings may pave the way for developing future Bi2Te3‐based dissipationless spintronics and fault‐tolerant quantum computation. Research with BiTe: Intriguing room‐temperature ferromagnetism can be observed in a nanostructured topological insulator, Bi2Te3, without introducing any exotic magnetic dopants. These findings may pave the way for developing Bi2Te3‐based dissipationless spintronics and fault‐tolerant quantum computing.
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subjects ab initio calculations
ferromagnetism
Hall effect
Magnetism
nanostructures
Point defects
Temperature
topological insulators
title Unexpected Room-Temperature Ferromagnetism in Nanostructured Bi2Te3
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