Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells

Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-v...

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Veröffentlicht in:	IEEE transactions on nuclear science 2013-12, Vol.60 (6), p.4563-4569
Hauptverfasser:	Gonzalez-Velo, Y., Barnaby, H. J., Kozicki, M. N., Dandamudi, P., Chandran, A., Holbert, K. E., Mitkova, M., Ailavajhala, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	Cation chalcogenide glass Data storage ECM electrochemical metallization Electrodes Electrolytes Electrolytic cells Germanium Memory devices Memristors Metallization Metallizing nanoionic memory Nonvolatile memory photo-diffusion photodoping PMC programmable metallization cell Radiation effects ReRAM Resistance resistive switching Switching total ionizing dose
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