Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells
Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-v...
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| Veröffentlicht in: | IEEE transactions on nuclear science 2013-12, Vol.60 (6), p.4563-4569 |
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| creator | Gonzalez-Velo, Y. Barnaby, H. J. Kozicki, M. N. Dandamudi, P. Chandran, A. Holbert, K. E. Mitkova, M. Ailavajhala, M. |
| description | Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge 30 Se 70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge 30 Se 70 is not affected by a total dose exposure of up to 10 Mrad( Ge 30 Se 70 ). |
| doi_str_mv | 10.1109/TNS.2013.2286318 |
| format | Article |
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J. ; Kozicki, M. N. ; Dandamudi, P. ; Chandran, A. ; Holbert, K. E. ; Mitkova, M. ; Ailavajhala, M.</creator><creatorcontrib>Gonzalez-Velo, Y. ; Barnaby, H. J. ; Kozicki, M. N. ; Dandamudi, P. ; Chandran, A. ; Holbert, K. E. ; Mitkova, M. ; Ailavajhala, M.</creatorcontrib><description>Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge 30 Se 70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge 30 Se 70 is not affected by a total dose exposure of up to 10 Mrad( Ge 30 Se 70 ).</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2013.2286318</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Cation ; chalcogenide glass ; Data storage ; ECM ; electrochemical metallization ; Electrodes ; Electrolytes ; Electrolytic cells ; Germanium ; Memory devices ; Memristors ; Metallization ; Metallizing ; nanoionic memory ; Nonvolatile memory ; photo-diffusion ; photodoping ; PMC ; programmable metallization cell ; Radiation effects ; ReRAM ; Resistance ; resistive switching ; Switching ; total ionizing dose</subject><ispartof>IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4563-4569</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c324t-74cb8250e4d9db7c4ccf4287c177049ab1cd288116cf7065837e0165e8d6716b3</citedby><cites>FETCH-LOGICAL-c324t-74cb8250e4d9db7c4ccf4287c177049ab1cd288116cf7065837e0165e8d6716b3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6678245$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,792,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6678245$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Gonzalez-Velo, Y.</creatorcontrib><creatorcontrib>Barnaby, H. J.</creatorcontrib><creatorcontrib>Kozicki, M. 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Investigation of the total dose response of PMCs will contribute to our understanding of radiation induced effects in these novel memory devices as well as assess their suitability for use in ionizing radiation environments. This work investigates the impact of total ionizing dose on the switching characteristic of silver doped Ge 30 Se 70 PMC memory devices. The results obtained show that the resistance switching characteristic of these cells which use a solid state electrolyte based on Ge 30 Se 70 is not affected by a total dose exposure of up to 10 Mrad( Ge 30 Se 70 ).</description><subject>Cation</subject><subject>chalcogenide glass</subject><subject>Data storage</subject><subject>ECM</subject><subject>electrochemical metallization</subject><subject>Electrodes</subject><subject>Electrolytes</subject><subject>Electrolytic cells</subject><subject>Germanium</subject><subject>Memory devices</subject><subject>Memristors</subject><subject>Metallization</subject><subject>Metallizing</subject><subject>nanoionic memory</subject><subject>Nonvolatile memory</subject><subject>photo-diffusion</subject><subject>photodoping</subject><subject>PMC</subject><subject>programmable metallization cell</subject><subject>Radiation effects</subject><subject>ReRAM</subject><subject>Resistance</subject><subject>resistive switching</subject><subject>Switching</subject><subject>total ionizing dose</subject><issn>0018-9499</issn><issn>1558-1578</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNpdkU1rGzEQhkVJoG7Se6GXhV56WUej1dcei-smgXzRuGeh1c7aCutVKsk0ya-PjEMPYQ7DzDzzzsBLyBegcwDanq1u7ueMQjNnTMsG9AcyAyF0DULpIzKjFHTd8rb9SD6l9FBKLqiYkadVyHasL8PkX_y0rn-GhNVyGNDlVIWpyhusfmPyKdvJYXX_z2e3KWC12NhoXcZYRt4Vdti3RhfWOPkeq7sY1tFut7YbsbrGcmT0Lzb7ornAcUyn5HiwY8LPb_mE_Pm1XC0u6qvb88vFj6vaNYznWnHXaSYo8r7tO-W4cwNnWjlQivLWduB6pjWAdIOiUuhGIQUpUPdSgeyaE_L9oPsYw98dpmy2PrnygZ0w7JIBqYVSXGtV0G_v0Iewi1P5zgCXbYkGWKHogXIxpBRxMI_Rb218NkDN3gpTrDB7K8ybFWXl62HFI-J_XEqlGRfNKw6ZhZk</recordid><startdate>20131201</startdate><enddate>20131201</enddate><creator>Gonzalez-Velo, Y.</creator><creator>Barnaby, H. 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J.</au><au>Kozicki, M. N.</au><au>Dandamudi, P.</au><au>Chandran, A.</au><au>Holbert, K. E.</au><au>Mitkova, M.</au><au>Ailavajhala, M.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells</atitle><jtitle>IEEE transactions on nuclear science</jtitle><stitle>TNS</stitle><date>2013-12-01</date><risdate>2013</risdate><volume>60</volume><issue>6</issue><spage>4563</spage><epage>4569</epage><pages>4563-4569</pages><issn>0018-9499</issn><eissn>1558-1578</eissn><coden>IETNAE</coden><abstract>Programmable metallization cells (PMCs) are emerging ReRAM devices exhibiting resistance switching due to cation transport in a solid-state electrolyte and redox reactions at the electrodes. Their non-volatility and low power requirements have led to increased interest in their development for non-volatile memory applications. 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| subjects | Cation chalcogenide glass Data storage ECM electrochemical metallization Electrodes Electrolytes Electrolytic cells Germanium Memory devices Memristors Metallization Metallizing nanoionic memory Nonvolatile memory photo-diffusion photodoping PMC programmable metallization cell Radiation effects ReRAM Resistance resistive switching Switching total ionizing dose |
| title | Total-Ionizing-Dose Effects on the Resistance Switching Characteristics of Chalcogenide Programmable Metallization Cells |
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