Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

Fabrication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy

Phosphorus (P)‐doped BaSi2 films were grown by molecular beam epitaxy. P‐doped BaSi2 showed n ‐type conductivity and the electron concentration increased up to 4×1017 cm–3 at room temperature. The temperature dependence of electron concentration revealed that the activation energy was approximately...

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Veröffentlicht in:Physica status solidi. C 2013-12, Vol.10 (12), p.1753-1755
Hauptverfasser: Takabe, R., Baba, M., Nakamura, K., Du, W., Khan, M. A., Koike, S., Toko, K., Hara, K. O., Usami, N., Suemasu, T.
Format: Artikel
Sprache:eng
Schlagworte:
BaSi2
phosphorus
solar cell
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Zusammenfassung:Phosphorus (P)‐doped BaSi2 films were grown by molecular beam epitaxy. P‐doped BaSi2 showed n ‐type conductivity and the electron concentration increased up to 4×1017 cm–3 at room temperature. The temperature dependence of electron concentration revealed that the activation energy was approximately 80 meV. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201300326