Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

Growth, structure, optical and electrical properties of Si/2D Mg2Si/Si(111) double heterostructures and Schottky diodes on their base

Mg2Si layers were grown on silicon by RDE at 150 °C and by SPE at 160 °C, and they were covered by silicon cap grown by MBE at 150‐180 °C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved...

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Veröffentlicht in:Physica status solidi. C 2013-12, Vol.10 (12), p.1720-1723
Hauptverfasser: Galkin, Konstantin N., Galkin, Nikolay G., Dózsa, László, Dotsenko, Sergei A., Chernev, Igor M., Vavanova, Svetlana V., Dobos, László, Pécz, Béla
Format: Artikel
Sprache:eng
Schlagworte:
heterostructures
magnesium silicide
properties
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Zusammenfassung:Mg2Si layers were grown on silicon by RDE at 150 °C and by SPE at 160 °C, and they were covered by silicon cap grown by MBE at 150‐180 °C. The silicide layers and the silicon cap were investigated by in situ and ex situ methods. The 2D Mg2Si layer continuity and electrical properties were conserved during cap growth. The point defects in the structure are dominated by contamination of the substrate and by diffusion of the not reacted Mg into silicon. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201300366