Bias Stress and Memory Effect in Pentacene-based Organic Thin-Film Transistors with a Fullerene Layer

Organic memory-transistor devices were fabricated from pentacene-based organic thin-film transistors (OTFTs) with a fullerene layer. The current-voltage (I-V) characteristics show that the fabricated OTFTs exhibit a unipolar property with p-channel characteristics. The fabricated OTFTs devices exhib...

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Veröffentlicht in:	E-journal of surface science and nanotechnology 2009/08/08, Vol.7, pp.808-812
Hauptverfasser:	Mohamad, Khairul Anuar, Yamada, Shinya, Uesugi, Katsuhiro, Fukuda, Hisashi
Format:	Artikel
Sprache:	eng
Schlagworte:	Bias Fullerene Memory effect Mobility Organic thin-film Pentacene Threshold voltage shift Transistor
Online-Zugang:	Volltext
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