Atomic-scale mechanisms of ferroelastic domain-wall-mediated ferroelectric switching

Polarization switching in ferroelectric thin films occurs via nucleation and growth of 180° domains through a highly inhomogeneous process in which the kinetics are largely controlled by defects, interfaces and pre-existing domain walls. Here we present the first real-time, atomic-scale observations...

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Veröffentlicht in:Nature communications 2013-11, Vol.4 (1), p.2791, Article 2791
Hauptverfasser: Gao, Peng, Britson, Jason, Jokisaari, Jacob R., Nelson, Christopher T., Baek, Seung-Hyub, Wang, Yiran, Eom, Chang-Beom, Chen, Long-Qing, Pan, Xiaoqing
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Sprache:eng
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