Low Temperature Preparation of TiO2 Thin Films by Plasma-Enhanced Chemical Vapor Deposition

Thin films of TiO2 were prepared from gas mixtures of TiCl4 and O2 using rf glow discharge. TiO2 films were grown on glass, Si, Ti and MgO substrates at temperatures as low as 200°C by applying an rf power of 10W, although no film was deposited without glow discharge even at 470°C except on the Ti s...

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Veröffentlicht in:	Journal of the Ceramic Society of Japan 1993-01, Vol.101 (1173), p.514
Hauptverfasser:	KUMASHIRO, Yoshimasa, KINOSHITA, Yoshiki, TAKAOKA, Yoichi, MURASAWA, Sadao
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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