EUVL Challenges towards 1x nm Generation

EUVL Challenges towards 1x nm Generation

EUVL applicability to mass production in 2x nm generations has been proved by recent developments. For 1x nm generations, three major lithography candidates to be applied for mass productions are discussed, quadruple patterning, EUVL single patterning and EUVL double patterning. Three candidates are...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2011/06/21, Vol.24(1), pp.19-23
Hauptverfasser: Kyoh, Suigen, Nakajima, Yumi, Watanabe, Shinya, Imamura, Tsubasa, Sasaki, Toshiyuki, Omura, Mitsuhiro, Tawarayama, Kazuo, Matsunaga, Kentaro
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Sprache:eng
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cost
double patterning
EUV
quadruple patterning
TAT
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container_end_page 23
container_issue 1
container_start_page 19
container_title Journal of Photopolymer Science and Technology
container_volume 24
creator Kyoh, Suigen
Nakajima, Yumi
Watanabe, Shinya
Imamura, Tsubasa
Sasaki, Toshiyuki
Omura, Mitsuhiro
Tawarayama, Kazuo
Matsunaga, Kentaro
description EUVL applicability to mass production in 2x nm generations has been proved by recent developments. For 1x nm generations, three major lithography candidates to be applied for mass productions are discussed, quadruple patterning, EUVL single patterning and EUVL double patterning. Three candidates are compared from following viewpoints, lithography performance, process cost and turn around time. Through the comparison, EUVL is the most promising way to 1x nm generations. EUVL single patterning has an advantage of cost and TAT and EUVL double patterning has a potential to extend resolution limit to 0x nm hp.
doi_str_mv 10.2494/photopolymer.24.19
format Article
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subjects cost
double patterning
EUV
quadruple patterning
TAT
title EUVL Challenges towards 1x nm Generation
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