Improvement of Defect Issues for Advanced 193nm Resist

Improvement of Defect Issues for Advanced 193nm Resist

The first generation 193nm resist for sub-90nm DRAM device has brought up defect issues in mass production. Improvement from several aspects has been applied along three different types of defect, 1) micro-bridge, 2) gel-like defect, 3) nozzle drying defect. Diversified attempts were considered from...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2004, Vol.17(4), pp.545-548
Hauptverfasser: Kim, KyungMee, Kim, JaeHo, Kim, YoungHo, Kim, SangMun
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Sprache:eng
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ArF(193nm) device
defect
nozzle defect
u-bridge
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container_title Journal of Photopolymer Science and Technology
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creator Kim, KyungMee
Kim, JaeHo
Kim, YoungHo
Kim, SangMun
description The first generation 193nm resist for sub-90nm DRAM device has brought up defect issues in mass production. Improvement from several aspects has been applied along three different types of defect, 1) micro-bridge, 2) gel-like defect, 3) nozzle drying defect. Diversified attempts were considered from monomer design and polymerization to resist purification process via solvent selection as keys for defect-free solution. Polymerization and following purification process should be well considered to reduce high molecular size fraction. Co-solvent system for resist was also effective to avoid drying out of resist on coating nozzle tip. Also material design of monomers was essentially important to keep composition uniformity in polymer chain and not to generate defect precursor.
doi_str_mv 10.2494/photopolymer.17.545
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subjects ArF(193nm) device
defect
nozzle defect
u-bridge
title Improvement of Defect Issues for Advanced 193nm Resist
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