Current Status of EUV Photoresists

Current Status of EUV Photoresists

The current status of EUV resists is reviewed based on performance studies of line edge roughness (LER), sensitivity, resolution and pattern transfer. A large variation in polymer molecular weight (2.9-33.5 K g/mol) is found to have little effect on LER. Dissolution properties such as unexposed film...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2003, Vol.16(3), pp.401-410
Hauptverfasser: Brainard, Robert L., Cobb, Jonathan, Cutler, Charlotte A.
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Sprache:eng
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EUVL
Extreme Ultraviolet Lithography
line-edge roughness
photoresist
photospeed
resolution
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container_title Journal of Photopolymer Science and Technology
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creator Brainard, Robert L.
Cobb, Jonathan
Cutler, Charlotte A.
description The current status of EUV resists is reviewed based on performance studies of line edge roughness (LER), sensitivity, resolution and pattern transfer. A large variation in polymer molecular weight (2.9-33.5 K g/mol) is found to have little effect on LER. Dissolution properties such as unexposed film thickness loss (UFTL) are shown to have a large effect on LER. Increasing resist contrast and image contrast are shown to improve resist LER. Variation in base level within resists based on EUV-2D shows a clear trade-off between sensitivity and LER. Acid difusion can play an important role in determining LER. Resist resolution and image transfer capabilities are also discussed.
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subjects EUVL
Extreme Ultraviolet Lithography
line-edge roughness
photoresist
photospeed
resolution
title Current Status of EUV Photoresists
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