Ultra Thin Film Resist for Low Energy E-beam Projection Lithography

Recently, new resist criteria for low energy electron beam projection lithography (LEEPL) such as bi-layer, chemically amplified and silicon containing resists have been requested. In order to investigate the lithographic characteristics of each system, three chemically amplified resist samples cons...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2002, Vol.15(3), pp.417-422
Hauptverfasser:	Nakamura, Tsuyoshi, Ishikawa, Kiyoshi, Sato, Mitsuru, Komano, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	chemically amplified resist defect LEEPL low energy electron beam lithography silsesquioxane
Online-Zugang:	Volltext
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