Fundamental Studies of Fluoropolymer Photoresists for 157nm Lithography

A variety of fluorocarbinol containing polymers have been studied in an effort to identify transparent polymer platforms for use in 157nm VUV lithography. It was found that a single α-trifluoromethyl substituent renders poly(α-trifluoromethyl vinyl alcohol-co-vinyl alcohol), P(CF3VA-co-PVA), readily...

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Veröffentlicht in:Journal of Photopolymer Science and Technology 2000, Vol.13(3), pp.451-458
Hauptverfasser: Schmaljohann, Dirk, Young, Cheol Bae, Dai, Junyan, Weibel, Gina L., Hamad, Alyssandrea H., Ober, Christopher K.
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container_issue 3
container_start_page 451
container_title Journal of Photopolymer Science and Technology
container_volume 13
creator Schmaljohann, Dirk
Young, Cheol Bae
Dai, Junyan
Weibel, Gina L.
Hamad, Alyssandrea H.
Ober, Christopher K.
description A variety of fluorocarbinol containing polymers have been studied in an effort to identify transparent polymer platforms for use in 157nm VUV lithography. It was found that a single α-trifluoromethyl substituent renders poly(α-trifluoromethyl vinyl alcohol-co-vinyl alcohol), P(CF3VA-co-PVA), readily soluble in 0.262N TMAH. The THP-protected polymer can be spin-coated from PGMEA solutions and preliminary studies using 248nm exposure showed that it undergoes chemically amplified deprotection with a clearing dose of ∼-15mJ/cm2. Using a VUV spectrometer, absorption coefficients of ∼-3μm-1 were observed at 157nm with P(CF3VA-co-PVA) and THP protected P(CF3VA-co-PVA). On the basis of these results, we extended our investigation to a series of fluorocarbinol containing polydienes as aqueous base soluble polymer platforms synthesized by the ene reaction of hexafluoroacetone on the double bond. Fluorine content and glass transition temperature can be well controlled. We will discuss the scope and limitation of fluoropolymers for 157nm lithography.
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fullrecord <record><control><sourceid>proquest_jstag</sourceid><recordid>TN_cdi_proquest_journals_1444614759</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3107777801</sourcerecordid><originalsourceid>FETCH-LOGICAL-j979-ac52778f7716e7c10260f63228e9798c0dc64192a35df836d3358d958e2320993</originalsourceid><addsrcrecordid>eNpNkE1LxDAQhoMouK7-Ai8Fz12TTD6PsrgqFBTcewhtum1pm5qkh_33dlkVLzMM8_DM8CJ0T_CGMs0ep8YnP_n-OLiwIbBhnFygFQGmcwEgLtEKa8JyTRm7RjcxdhgDcK5X6GU3j5Ud3Jhsn32muWpdzHyd7frZh19l9nHyBxfbmGJW-5ARLschK9rU-EOwU3O8RVe17aO7--lrtN8977evefH-8rZ9KvJOS53bklMpVS0lEU6WBFOBawGUKresVYmrUjCiqQVe1QpEtXypKs2Vo0Cx1rBGD2ftFPzX7GIynZ_DuFw0hDEmCJP8RBVnqovJHpyZQjvYcDQ2pLbsl_lfXEQrZQgYOJcluT-sbGwwboRvN-trWg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1444614759</pqid></control><display><type>article</type><title>Fundamental Studies of Fluoropolymer Photoresists for 157nm Lithography</title><source>J-STAGE Free</source><source>Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals</source><source>Free Full-Text Journals in Chemistry</source><creator>Schmaljohann, Dirk ; Young, Cheol Bae ; Dai, Junyan ; Weibel, Gina L. ; Hamad, Alyssandrea H. ; Ober, Christopher K.</creator><creatorcontrib>Schmaljohann, Dirk ; Young, Cheol Bae ; Dai, Junyan ; Weibel, Gina L. ; Hamad, Alyssandrea H. ; Ober, Christopher K.</creatorcontrib><description>A variety of fluorocarbinol containing polymers have been studied in an effort to identify transparent polymer platforms for use in 157nm VUV lithography. It was found that a single α-trifluoromethyl substituent renders poly(α-trifluoromethyl vinyl alcohol-co-vinyl alcohol), P(CF3VA-co-PVA), readily soluble in 0.262N TMAH. The THP-protected polymer can be spin-coated from PGMEA solutions and preliminary studies using 248nm exposure showed that it undergoes chemically amplified deprotection with a clearing dose of ∼-15mJ/cm2. Using a VUV spectrometer, absorption coefficients of ∼-3μm-1 were observed at 157nm with P(CF3VA-co-PVA) and THP protected P(CF3VA-co-PVA). On the basis of these results, we extended our investigation to a series of fluorocarbinol containing polydienes as aqueous base soluble polymer platforms synthesized by the ene reaction of hexafluoroacetone on the double bond. Fluorine content and glass transition temperature can be well controlled. We will discuss the scope and limitation of fluoropolymers for 157nm lithography.</description><identifier>ISSN: 0914-9244</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.13.451</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>157nm photoresists ; chemically amplified deprotection ; fluoropolymers</subject><ispartof>Journal of Photopolymer Science and Technology, 2000, Vol.13(3), pp.451-458</ispartof><rights>The Technical Association of Photopolymers, Japan</rights><rights>Copyright Japan Science and Technology Agency 2000</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,27901,27902</link.rule.ids></links><search><creatorcontrib>Schmaljohann, Dirk</creatorcontrib><creatorcontrib>Young, Cheol Bae</creatorcontrib><creatorcontrib>Dai, Junyan</creatorcontrib><creatorcontrib>Weibel, Gina L.</creatorcontrib><creatorcontrib>Hamad, Alyssandrea H.</creatorcontrib><creatorcontrib>Ober, Christopher K.</creatorcontrib><title>Fundamental Studies of Fluoropolymer Photoresists for 157nm Lithography</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>A variety of fluorocarbinol containing polymers have been studied in an effort to identify transparent polymer platforms for use in 157nm VUV lithography. It was found that a single α-trifluoromethyl substituent renders poly(α-trifluoromethyl vinyl alcohol-co-vinyl alcohol), P(CF3VA-co-PVA), readily soluble in 0.262N TMAH. The THP-protected polymer can be spin-coated from PGMEA solutions and preliminary studies using 248nm exposure showed that it undergoes chemically amplified deprotection with a clearing dose of ∼-15mJ/cm2. Using a VUV spectrometer, absorption coefficients of ∼-3μm-1 were observed at 157nm with P(CF3VA-co-PVA) and THP protected P(CF3VA-co-PVA). On the basis of these results, we extended our investigation to a series of fluorocarbinol containing polydienes as aqueous base soluble polymer platforms synthesized by the ene reaction of hexafluoroacetone on the double bond. Fluorine content and glass transition temperature can be well controlled. We will discuss the scope and limitation of fluoropolymers for 157nm lithography.</description><subject>157nm photoresists</subject><subject>chemically amplified deprotection</subject><subject>fluoropolymers</subject><issn>0914-9244</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2000</creationdate><recordtype>article</recordtype><recordid>eNpNkE1LxDAQhoMouK7-Ai8Fz12TTD6PsrgqFBTcewhtum1pm5qkh_33dlkVLzMM8_DM8CJ0T_CGMs0ep8YnP_n-OLiwIbBhnFygFQGmcwEgLtEKa8JyTRm7RjcxdhgDcK5X6GU3j5Ud3Jhsn32muWpdzHyd7frZh19l9nHyBxfbmGJW-5ARLschK9rU-EOwU3O8RVe17aO7--lrtN8977evefH-8rZ9KvJOS53bklMpVS0lEU6WBFOBawGUKresVYmrUjCiqQVe1QpEtXypKs2Vo0Cx1rBGD2ftFPzX7GIynZ_DuFw0hDEmCJP8RBVnqovJHpyZQjvYcDQ2pLbsl_lfXEQrZQgYOJcluT-sbGwwboRvN-trWg</recordid><startdate>20000530</startdate><enddate>20000530</enddate><creator>Schmaljohann, Dirk</creator><creator>Young, Cheol Bae</creator><creator>Dai, Junyan</creator><creator>Weibel, Gina L.</creator><creator>Hamad, Alyssandrea H.</creator><creator>Ober, Christopher K.</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20000530</creationdate><title>Fundamental Studies of Fluoropolymer Photoresists for 157nm Lithography</title><author>Schmaljohann, Dirk ; Young, Cheol Bae ; Dai, Junyan ; Weibel, Gina L. ; Hamad, Alyssandrea H. ; Ober, Christopher K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-j979-ac52778f7716e7c10260f63228e9798c0dc64192a35df836d3358d958e2320993</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2000</creationdate><topic>157nm photoresists</topic><topic>chemically amplified deprotection</topic><topic>fluoropolymers</topic><toplevel>online_resources</toplevel><creatorcontrib>Schmaljohann, Dirk</creatorcontrib><creatorcontrib>Young, Cheol Bae</creatorcontrib><creatorcontrib>Dai, Junyan</creatorcontrib><creatorcontrib>Weibel, Gina L.</creatorcontrib><creatorcontrib>Hamad, Alyssandrea H.</creatorcontrib><creatorcontrib>Ober, Christopher K.</creatorcontrib><collection>Electronics &amp; Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Schmaljohann, Dirk</au><au>Young, Cheol Bae</au><au>Dai, Junyan</au><au>Weibel, Gina L.</au><au>Hamad, Alyssandrea H.</au><au>Ober, Christopher K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Fundamental Studies of Fluoropolymer Photoresists for 157nm Lithography</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2000-05-30</date><risdate>2000</risdate><volume>13</volume><issue>3</issue><spage>451</spage><epage>458</epage><pages>451-458</pages><issn>0914-9244</issn><eissn>1349-6336</eissn><abstract>A variety of fluorocarbinol containing polymers have been studied in an effort to identify transparent polymer platforms for use in 157nm VUV lithography. It was found that a single α-trifluoromethyl substituent renders poly(α-trifluoromethyl vinyl alcohol-co-vinyl alcohol), P(CF3VA-co-PVA), readily soluble in 0.262N TMAH. The THP-protected polymer can be spin-coated from PGMEA solutions and preliminary studies using 248nm exposure showed that it undergoes chemically amplified deprotection with a clearing dose of ∼-15mJ/cm2. Using a VUV spectrometer, absorption coefficients of ∼-3μm-1 were observed at 157nm with P(CF3VA-co-PVA) and THP protected P(CF3VA-co-PVA). On the basis of these results, we extended our investigation to a series of fluorocarbinol containing polydienes as aqueous base soluble polymer platforms synthesized by the ene reaction of hexafluoroacetone on the double bond. Fluorine content and glass transition temperature can be well controlled. We will discuss the scope and limitation of fluoropolymers for 157nm lithography.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.13.451</doi><tpages>8</tpages><oa>free_for_read</oa></addata></record>
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subjects 157nm photoresists
chemically amplified deprotection
fluoropolymers
title Fundamental Studies of Fluoropolymer Photoresists for 157nm Lithography
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