Analysis of Quencher Diffusion in Chemically Amplified Resists and Its Effect on Imaging Characteristics

Diffusion of quencher contained in most chemically amplified resists today can cause proximity effects such as dependence of pattern feature size on pattern density or iso-dense bias. Diffusion coefficients were measured for several quencher compounds, and significantly large diffusion coefficients...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 2000, Vol.13(3), pp.477-484
Hauptverfasser:	Hattori, Keiko, Hotta, Shoji, Hagiwara, Takuya, Fukuda, Hiroshi
Format:	Artikel
Sprache:	eng
Schlagworte:	acid chemically amplified resist diffusion proximity effect quencher simulation
Online-Zugang:	Volltext
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