Experimental EUV Exposure System using a Synchrotron Source

Extreme ultraviolet lithography (EUVL) is an candidate for lithography technology to be used for the fabrication of the future-generation semiconductor devices with the design rule of 100nm and below. Till date few extreme ultraviolet (EUV) exposure experiments, which demonstrate a high resolution o...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 1998, Vol.11(4), pp.565-570
Hauptverfasser:	Murakami, Katsuhiko, Oshino, Tetsuya, Kinoshita, Hiroo, Watanabe, Takeo, Niibe, Masahito, Ito, Masaaki, Oizumi, Hiroaki, Yamanashi, Hiromasa
Format:	Artikel
Sprache:	eng
Schlagworte:	aspheric mirror extreme ultraviolet lithography (EUVL) multilayer mirror synchrotron radiation
Online-Zugang:	Volltext
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