Structural Design of Resin Matrix and Acid-labile Dissolution Inhibitor of Chemical Amplification Positive Electron-beam Resist for Gigabit Lithography
The effect of m/p-cresol novolak molecular-weight-distribution (MWD) and dissolution inhibitor structure on resist performance were investigated. A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dissolution inhibitor, tetrahydropyranyl (THP) protec...
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Veröffentlicht in: | Journal of Photopolymer Science and Technology 1998, Vol.11(4), pp.547-552 |
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container_title | Journal of Photopolymer Science and Technology |
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creator | Sakamizu, Toshio Arai, Tadasi Katoh, Kohji Uchino, Shou-ichi Murai, Fumio Suzuki, Yasunori Shiraishi, Hiroshi |
description | The effect of m/p-cresol novolak molecular-weight-distribution (MWD) and dissolution inhibitor structure on resist performance were investigated. A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dissolution inhibitor, tetrahydropyranyl (THP) protected-polymeric dissolution inhibitor. In particular, a high molecular-weight novolak resin richer in p-cresol ratio was regarded as an effective matrix of a chemical amplification (CA) positive resist. THP protected phenolic compounds with extended backbone structures showed a large dissolution inhibition. The resist with MWD controlled resin and a THP-protected phenolic compound can achieve high resolution patterns (100-nm contact holes ) with high sensitivity (6.0μC/cm2). |
doi_str_mv | 10.2494/photopolymer.11.547 |
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A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dissolution inhibitor, tetrahydropyranyl (THP) protected-polymeric dissolution inhibitor. In particular, a high molecular-weight novolak resin richer in p-cresol ratio was regarded as an effective matrix of a chemical amplification (CA) positive resist. THP protected phenolic compounds with extended backbone structures showed a large dissolution inhibition. 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Photopol. Sci. Technol.</addtitle><description>The effect of m/p-cresol novolak molecular-weight-distribution (MWD) and dissolution inhibitor structure on resist performance were investigated. A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dissolution inhibitor, tetrahydropyranyl (THP) protected-polymeric dissolution inhibitor. In particular, a high molecular-weight novolak resin richer in p-cresol ratio was regarded as an effective matrix of a chemical amplification (CA) positive resist. THP protected phenolic compounds with extended backbone structures showed a large dissolution inhibition. The resist with MWD controlled resin and a THP-protected phenolic compound can achieve high resolution patterns (100-nm contact holes ) with high sensitivity (6.0μC/cm2).</description><subject>dissolution inhibitor</subject><subject>electron beam</subject><subject>molecular weight distribution</subject><subject>novolak</subject><issn>0914-9244</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1998</creationdate><recordtype>article</recordtype><recordid>eNpVkUFv1DAUhC0EEkvhF3CxxDlLHNuJfVxtS6m0FVVbzpbjvGy8cuJgOxX7S_i7eLuoKpf35jDfzGEQ-kzKdcUk-zoPPvnZu-MIYU3ImrPmDVoRymRRU1q_RatSElbIirH36EOMh7KklHO5Qn8eUlhMWoJ2-BKi3U_Y9_g-qwnf6hTsb6ynDm-M7QqnW-sAX9oYvVuS9RO-mQbb2uTDidoOMFqTgzbj7Gyf5bPnzkeb7BPgKwcmBT8VLejxuSMm3Gf22u5zdMI7mwa_D3oejh_Ru167CJ_-_Qv089vV4_Z7sftxfbPd7ArDeNUUVa1pB33XAGkrIjgvBQdtKmB120hqRAOMNFwwY5qOkFaKnksjhZYdCAaUXqAv59w5-F8LxKQOfglTrlSEMVaXklYiu-jZZYKPMUCv5mBHHY6KlOq0gHq9gCJE5QUytTtTh5j0Hl4YHZI1Dv5jiBTixLHzyfiLzQw6KJjoXzbqnH0</recordid><startdate>1998</startdate><enddate>1998</enddate><creator>Sakamizu, Toshio</creator><creator>Arai, Tadasi</creator><creator>Katoh, Kohji</creator><creator>Uchino, Shou-ichi</creator><creator>Murai, Fumio</creator><creator>Suzuki, Yasunori</creator><creator>Shiraishi, Hiroshi</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>1998</creationdate><title>Structural Design of Resin Matrix and Acid-labile Dissolution Inhibitor of Chemical Amplification Positive Electron-beam Resist for Gigabit Lithography</title><author>Sakamizu, Toshio ; Arai, Tadasi ; Katoh, Kohji ; Uchino, Shou-ichi ; Murai, Fumio ; Suzuki, Yasunori ; Shiraishi, Hiroshi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4527-26a3defd7e1b21855085eac2e46b793c87e417584cc7d11b98f59c98a9de84e33</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1998</creationdate><topic>dissolution inhibitor</topic><topic>electron beam</topic><topic>molecular weight distribution</topic><topic>novolak</topic><toplevel>online_resources</toplevel><creatorcontrib>Sakamizu, Toshio</creatorcontrib><creatorcontrib>Arai, Tadasi</creatorcontrib><creatorcontrib>Katoh, Kohji</creatorcontrib><creatorcontrib>Uchino, Shou-ichi</creatorcontrib><creatorcontrib>Murai, Fumio</creatorcontrib><creatorcontrib>Suzuki, Yasunori</creatorcontrib><creatorcontrib>Shiraishi, Hiroshi</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sakamizu, Toshio</au><au>Arai, Tadasi</au><au>Katoh, Kohji</au><au>Uchino, Shou-ichi</au><au>Murai, Fumio</au><au>Suzuki, Yasunori</au><au>Shiraishi, Hiroshi</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Structural Design of Resin Matrix and Acid-labile Dissolution Inhibitor of Chemical Amplification Positive Electron-beam Resist for Gigabit Lithography</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>1998</date><risdate>1998</risdate><volume>11</volume><issue>4</issue><spage>547</spage><epage>552</epage><pages>547-552</pages><issn>0914-9244</issn><eissn>1349-6336</eissn><abstract>The effect of m/p-cresol novolak molecular-weight-distribution (MWD) and dissolution inhibitor structure on resist performance were investigated. A novolak resin richer in p-cresol ratio gave a large dissolution inhibition capability of polymeric dissolution inhibitor, tetrahydropyranyl (THP) protected-polymeric dissolution inhibitor. In particular, a high molecular-weight novolak resin richer in p-cresol ratio was regarded as an effective matrix of a chemical amplification (CA) positive resist. THP protected phenolic compounds with extended backbone structures showed a large dissolution inhibition. The resist with MWD controlled resin and a THP-protected phenolic compound can achieve high resolution patterns (100-nm contact holes ) with high sensitivity (6.0μC/cm2).</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.11.547</doi><tpages>6</tpages><oa>free_for_read</oa></addata></record> |
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language | eng |
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source | J-STAGE (Japan Science & Technology Information Aggregator, Electronic) Freely Available Titles - Japanese; Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; Free Full-Text Journals in Chemistry |
subjects | dissolution inhibitor electron beam molecular weight distribution novolak |
title | Structural Design of Resin Matrix and Acid-labile Dissolution Inhibitor of Chemical Amplification Positive Electron-beam Resist for Gigabit Lithography |
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