Characteristics of Silicon-Based Negative Resists in ArF Excimer Laser Lithography

Bi-level resist systems consisting of a thin top silicon containing resist and a thick bottom layer are very promising with ArF-excimer laser lithography for obtaining high-aspect patterns on a high-step substrate. We studied the 193nm light sensitivity and the crosslinking mechanism of various cros...

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Veröffentlicht in:	Journal of Photopolymer Science and Technology 1995, Vol.8(1), pp.11-20
Hauptverfasser:	Watanabe, Keiji, Igarashi, Miwa, Yano, Ei, Namiki, Takahisa, Nozaki, Koji, Kuramitsu, Yohko
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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