Enhanced Dielectric Properties of Pb0.3Sr0.7TiO3 Thin Films by Ultrasonic Processing
Pb0.3Sr0.7TiO3 (PST) thin films have been prepared from precursor solution sonicated for different time on Pt/Ti/SiO2/Si substrates by sol-gel method. The effect of ultrasonic processing on the chemical bonding of PST precursor solution and the thermal evolution of PST dry gel are characterized with...
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Veröffentlicht in: | Applied Mechanics and Materials 2013-01, Vol.252, p.232-236 |
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description | Pb0.3Sr0.7TiO3 (PST) thin films have been prepared from precursor solution sonicated for different time on Pt/Ti/SiO2/Si substrates by sol-gel method. The effect of ultrasonic processing on the chemical bonding of PST precursor solution and the thermal evolution of PST dry gel are characterized with FT-IR and TG-DT technology. The structure, dielectric properties and leakage current density of PST thin films are investigated as functions of sol ultrasonic processing time. It’s found that ultrasonic processing brings about the partial sol structure rearrangement, the delay of PST formative temperature, the reduction of crystallization and dielectric constant, and the significant improvement of leakage current, dielectric loss and the figure of merit (FOM). The results suggest that the enhancement in the quality of thin films prepared with sol-gel method can be obtained by the suitable ultrasonic processing on precursor solutions. The PST thin film prepared from precursor solution sonicated for 8 h shows the highest FOM for its appropriate tunability of 57.36% and low dielectric loss of 0.0144. |
doi_str_mv | 10.4028/www.scientific.net/AMM.252.232 |
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The effect of ultrasonic processing on the chemical bonding of PST precursor solution and the thermal evolution of PST dry gel are characterized with FT-IR and TG-DT technology. The structure, dielectric properties and leakage current density of PST thin films are investigated as functions of sol ultrasonic processing time. It’s found that ultrasonic processing brings about the partial sol structure rearrangement, the delay of PST formative temperature, the reduction of crystallization and dielectric constant, and the significant improvement of leakage current, dielectric loss and the figure of merit (FOM). The results suggest that the enhancement in the quality of thin films prepared with sol-gel method can be obtained by the suitable ultrasonic processing on precursor solutions. The PST thin film prepared from precursor solution sonicated for 8 h shows the highest FOM for its appropriate tunability of 57.36% and low dielectric loss of 0.0144.</description><identifier>ISSN: 1660-9336</identifier><identifier>ISSN: 1662-7482</identifier><identifier>ISBN: 9783037855621</identifier><identifier>ISBN: 3037855622</identifier><identifier>EISSN: 1662-7482</identifier><identifier>DOI: 10.4028/www.scientific.net/AMM.252.232</identifier><language>eng</language><publisher>Zurich: Trans Tech Publications Ltd</publisher><ispartof>Applied Mechanics and Materials, 2013-01, Vol.252, p.232-236</ispartof><rights>2013 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. 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The effect of ultrasonic processing on the chemical bonding of PST precursor solution and the thermal evolution of PST dry gel are characterized with FT-IR and TG-DT technology. The structure, dielectric properties and leakage current density of PST thin films are investigated as functions of sol ultrasonic processing time. It’s found that ultrasonic processing brings about the partial sol structure rearrangement, the delay of PST formative temperature, the reduction of crystallization and dielectric constant, and the significant improvement of leakage current, dielectric loss and the figure of merit (FOM). The results suggest that the enhancement in the quality of thin films prepared with sol-gel method can be obtained by the suitable ultrasonic processing on precursor solutions. 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Sun, Xiao Hua ; Yang, Ying ; Hou, Shuang ; Huang, Cai Hua ; Li, Xiu Neng</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c356t-639a673dde81e9fc224fe0210c97a1e41e317654e60eab5e1adb2e895cd8abef3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wu, Min</creatorcontrib><creatorcontrib>Sun, Xiao Hua</creatorcontrib><creatorcontrib>Yang, Ying</creatorcontrib><creatorcontrib>Hou, Shuang</creatorcontrib><creatorcontrib>Huang, Cai Hua</creatorcontrib><creatorcontrib>Li, Xiu Neng</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central</collection><collection>Continental Europe Database</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Civil Engineering Abstracts</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection><jtitle>Applied Mechanics and Materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wu, Min</au><au>Sun, Xiao Hua</au><au>Yang, Ying</au><au>Hou, Shuang</au><au>Huang, Cai Hua</au><au>Li, Xiu Neng</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhanced Dielectric Properties of Pb0.3Sr0.7TiO3 Thin Films by Ultrasonic Processing</atitle><jtitle>Applied Mechanics and Materials</jtitle><date>2013-01-01</date><risdate>2013</risdate><volume>252</volume><spage>232</spage><epage>236</epage><pages>232-236</pages><issn>1660-9336</issn><issn>1662-7482</issn><eissn>1662-7482</eissn><isbn>9783037855621</isbn><isbn>3037855622</isbn><abstract>Pb0.3Sr0.7TiO3 (PST) thin films have been prepared from precursor solution sonicated for different time on Pt/Ti/SiO2/Si substrates by sol-gel method. The effect of ultrasonic processing on the chemical bonding of PST precursor solution and the thermal evolution of PST dry gel are characterized with FT-IR and TG-DT technology. The structure, dielectric properties and leakage current density of PST thin films are investigated as functions of sol ultrasonic processing time. It’s found that ultrasonic processing brings about the partial sol structure rearrangement, the delay of PST formative temperature, the reduction of crystallization and dielectric constant, and the significant improvement of leakage current, dielectric loss and the figure of merit (FOM). The results suggest that the enhancement in the quality of thin films prepared with sol-gel method can be obtained by the suitable ultrasonic processing on precursor solutions. The PST thin film prepared from precursor solution sonicated for 8 h shows the highest FOM for its appropriate tunability of 57.36% and low dielectric loss of 0.0144.</abstract><cop>Zurich</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/AMM.252.232</doi><tpages>5</tpages></addata></record> |
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title | Enhanced Dielectric Properties of Pb0.3Sr0.7TiO3 Thin Films by Ultrasonic Processing |
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