Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering

Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering

Transparent conducting aluminum-doped and undoped ZnO thin films have been deposited by direct current (DC) sputtering technique from ZnO target onto glass substrate at room temperature and 400 °C. X-ray diffraction analysis shows that all films have a preferential growth along the c-axis of the hex...

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Veröffentlicht in:European physical journal. Applied physics 2013-05, Vol.62 (2), p.20302
Hauptverfasser: Barhoumi, Amira, Yang, Liu, Sakly, Nawfel, Boughzala, Habib, Leroy, Gérard, Gest, Joël, Carru, Jean-Claude, Guermazi, Samir
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container_issue 2
container_start_page 20302
container_title European physical journal. Applied physics
container_volume 62
creator Barhoumi, Amira
Yang, Liu
Sakly, Nawfel
Boughzala, Habib
Leroy, Gérard
Gest, Joël
Carru, Jean-Claude
Guermazi, Samir
description Transparent conducting aluminum-doped and undoped ZnO thin films have been deposited by direct current (DC) sputtering technique from ZnO target onto glass substrate at room temperature and 400 °C. X-ray diffraction analysis shows that all films have a preferential growth along the c-axis of the hexagonal structure. The average grain size increases with the increasing deposition temperature and the doping of thin films. Analysis with AFM shows an improvement of the surface with the doping of thin films and deposition temperature. The root main square (RMS) surface roughness increases with deposition temperature. Al-doped ZnO (AZO) thin films have a lower electrical resistivity than that of ZnO thin films. 1/f noise measurement shows that ZnO thin film is more homogeneous than that of AZO.
doi_str_mv 10.1051/epjap/2013120535
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fullrecord <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_1431057459</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>3067169281</sourcerecordid><originalsourceid>FETCH-LOGICAL-c309t-e64611eac1c4c7c40e0262a21b72aa05cd49021901bb315c3ecbeec8886d40153</originalsourceid><addsrcrecordid>eNpNkE1PwzAMhisEEjC4c4zEuWAnTdsd0YABmgTiQxyjNHUho7QlSaWVX0_HEHDyx_vYlt8oOkI4QZB4St1Sd6ccUCAHKeRWtIc8T2MACdu_ecJ3o33vlwCAaS73ouEh9OXA2or54HoTeqdrppuSUU0mOGvGsnNtRy5Y8mvu0zaGtStb0jd3VsflKJf_--HVNqyy9btnJXWtt2HUi4Gdz5jv-hDI2eblINqpdO3p8CdOoqfLi8fZVby4nV_PzhaxETANMaVJikjaoElMZhIg4CnXHIuMaw3SlMkUOE4Bi0KgNIJMQWTyPE_LBFCKSXS82Tu-8dGTD2rZ9q4ZTypMxOhdlsjpSMGGMq713lGlOmfftRsUglobrL4NVn8GjyPxZsT6QKtfXrs3lWYikyqHZ4X8foZ3V3N1I74AbIZ_Fg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1431057459</pqid></control><display><type>article</type><title>Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering</title><source>Bacon EDP Sciences France Licence nationale-ISTEX-PS-Journals-PFISTEX</source><source>EDP Sciences</source><source>Cambridge University Press Journals Complete</source><creator>Barhoumi, Amira ; Yang, Liu ; Sakly, Nawfel ; Boughzala, Habib ; Leroy, Gérard ; Gest, Joël ; Carru, Jean-Claude ; Guermazi, Samir</creator><creatorcontrib>Barhoumi, Amira ; Yang, Liu ; Sakly, Nawfel ; Boughzala, Habib ; Leroy, Gérard ; Gest, Joël ; Carru, Jean-Claude ; Guermazi, Samir</creatorcontrib><description>Transparent conducting aluminum-doped and undoped ZnO thin films have been deposited by direct current (DC) sputtering technique from ZnO target onto glass substrate at room temperature and 400 °C. X-ray diffraction analysis shows that all films have a preferential growth along the c-axis of the hexagonal structure. The average grain size increases with the increasing deposition temperature and the doping of thin films. Analysis with AFM shows an improvement of the surface with the doping of thin films and deposition temperature. The root main square (RMS) surface roughness increases with deposition temperature. Al-doped ZnO (AZO) thin films have a lower electrical resistivity than that of ZnO thin films. 1/f noise measurement shows that ZnO thin film is more homogeneous than that of AZO.</description><identifier>ISSN: 1286-0042</identifier><identifier>EISSN: 1286-0050</identifier><identifier>DOI: 10.1051/epjap/2013120535</identifier><language>eng</language><publisher>Les Ulis: EDP Sciences</publisher><ispartof>European physical journal. Applied physics, 2013-05, Vol.62 (2), p.20302</ispartof><rights>EDP Sciences, 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c309t-e64611eac1c4c7c40e0262a21b72aa05cd49021901bb315c3ecbeec8886d40153</citedby><cites>FETCH-LOGICAL-c309t-e64611eac1c4c7c40e0262a21b72aa05cd49021901bb315c3ecbeec8886d40153</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,3727,27924,27925</link.rule.ids></links><search><creatorcontrib>Barhoumi, Amira</creatorcontrib><creatorcontrib>Yang, Liu</creatorcontrib><creatorcontrib>Sakly, Nawfel</creatorcontrib><creatorcontrib>Boughzala, Habib</creatorcontrib><creatorcontrib>Leroy, Gérard</creatorcontrib><creatorcontrib>Gest, Joël</creatorcontrib><creatorcontrib>Carru, Jean-Claude</creatorcontrib><creatorcontrib>Guermazi, Samir</creatorcontrib><title>Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering</title><title>European physical journal. Applied physics</title><description>Transparent conducting aluminum-doped and undoped ZnO thin films have been deposited by direct current (DC) sputtering technique from ZnO target onto glass substrate at room temperature and 400 °C. X-ray diffraction analysis shows that all films have a preferential growth along the c-axis of the hexagonal structure. The average grain size increases with the increasing deposition temperature and the doping of thin films. Analysis with AFM shows an improvement of the surface with the doping of thin films and deposition temperature. The root main square (RMS) surface roughness increases with deposition temperature. Al-doped ZnO (AZO) thin films have a lower electrical resistivity than that of ZnO thin films. 1/f noise measurement shows that ZnO thin film is more homogeneous than that of AZO.</description><issn>1286-0042</issn><issn>1286-0050</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNpNkE1PwzAMhisEEjC4c4zEuWAnTdsd0YABmgTiQxyjNHUho7QlSaWVX0_HEHDyx_vYlt8oOkI4QZB4St1Sd6ccUCAHKeRWtIc8T2MACdu_ecJ3o33vlwCAaS73ouEh9OXA2or54HoTeqdrppuSUU0mOGvGsnNtRy5Y8mvu0zaGtStb0jd3VsflKJf_--HVNqyy9btnJXWtt2HUi4Gdz5jv-hDI2eblINqpdO3p8CdOoqfLi8fZVby4nV_PzhaxETANMaVJikjaoElMZhIg4CnXHIuMaw3SlMkUOE4Bi0KgNIJMQWTyPE_LBFCKSXS82Tu-8dGTD2rZ9q4ZTypMxOhdlsjpSMGGMq713lGlOmfftRsUglobrL4NVn8GjyPxZsT6QKtfXrs3lWYikyqHZ4X8foZ3V3N1I74AbIZ_Fg</recordid><startdate>20130501</startdate><enddate>20130501</enddate><creator>Barhoumi, Amira</creator><creator>Yang, Liu</creator><creator>Sakly, Nawfel</creator><creator>Boughzala, Habib</creator><creator>Leroy, Gérard</creator><creator>Gest, Joël</creator><creator>Carru, Jean-Claude</creator><creator>Guermazi, Samir</creator><general>EDP Sciences</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>20130501</creationdate><title>Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering</title><author>Barhoumi, Amira ; Yang, Liu ; Sakly, Nawfel ; Boughzala, Habib ; Leroy, Gérard ; Gest, Joël ; Carru, Jean-Claude ; Guermazi, Samir</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c309t-e64611eac1c4c7c40e0262a21b72aa05cd49021901bb315c3ecbeec8886d40153</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Barhoumi, Amira</creatorcontrib><creatorcontrib>Yang, Liu</creatorcontrib><creatorcontrib>Sakly, Nawfel</creatorcontrib><creatorcontrib>Boughzala, Habib</creatorcontrib><creatorcontrib>Leroy, Gérard</creatorcontrib><creatorcontrib>Gest, Joël</creatorcontrib><creatorcontrib>Carru, Jean-Claude</creatorcontrib><creatorcontrib>Guermazi, Samir</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>European physical journal. Applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Barhoumi, Amira</au><au>Yang, Liu</au><au>Sakly, Nawfel</au><au>Boughzala, Habib</au><au>Leroy, Gérard</au><au>Gest, Joël</au><au>Carru, Jean-Claude</au><au>Guermazi, Samir</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering</atitle><jtitle>European physical journal. Applied physics</jtitle><date>2013-05-01</date><risdate>2013</risdate><volume>62</volume><issue>2</issue><spage>20302</spage><pages>20302-</pages><issn>1286-0042</issn><eissn>1286-0050</eissn><abstract>Transparent conducting aluminum-doped and undoped ZnO thin films have been deposited by direct current (DC) sputtering technique from ZnO target onto glass substrate at room temperature and 400 °C. X-ray diffraction analysis shows that all films have a preferential growth along the c-axis of the hexagonal structure. The average grain size increases with the increasing deposition temperature and the doping of thin films. Analysis with AFM shows an improvement of the surface with the doping of thin films and deposition temperature. The root main square (RMS) surface roughness increases with deposition temperature. Al-doped ZnO (AZO) thin films have a lower electrical resistivity than that of ZnO thin films. 1/f noise measurement shows that ZnO thin film is more homogeneous than that of AZO.</abstract><cop>Les Ulis</cop><pub>EDP Sciences</pub><doi>10.1051/epjap/2013120535</doi></addata></record>
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title Study of structural and electrical properties of zinc oxide and Al-doped zinc oxide thin films deposited by DC sputtering
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T05%3A38%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Study%20of%20structural%20and%20electrical%20properties%20of%20zinc%20oxide%20and%20Al-doped%20zinc%20oxide%20thin%20films%20deposited%20by%20DC%20sputtering&rft.jtitle=European%20physical%20journal.%20Applied%20physics&rft.au=Barhoumi,%20Amira&rft.date=2013-05-01&rft.volume=62&rft.issue=2&rft.spage=20302&rft.pages=20302-&rft.issn=1286-0042&rft.eissn=1286-0050&rft_id=info:doi/10.1051/epjap/2013120535&rft_dat=%3Cproquest_cross%3E3067169281%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1431057459&rft_id=info:pmid/&rfr_iscdi=true