Numerical Analysis of the Boundary Scattering Effect on Transport Properties in Bi-Sb Nanowires
In this study, we have numerically analyzed the transport properties of Bi-Sb nanowires, taking into account wire boundary scattering. Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobili...
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| Veröffentlicht in: | Journal of electronic materials 2013-07, Vol.42 (7), p.2172-2177 |
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| container_title | Journal of electronic materials |
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| creator | Nabatame, Yuta Matsumoto, Tsuyoshi Ichige, Yuki Komine, Takashi Sugita, Ryuji Murata, Masayuki Hasegawa, Yasuhiro |
| description | In this study, we have numerically analyzed the transport properties of Bi-Sb nanowires, taking into account wire boundary scattering. Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobility ratio of L-point electrons to T-point holes in the nanowires are smaller than those in bulk Bi-Sb because the wire boundary scattering suppresses the mobilities of L-point electrons and heavy holes. The largest Seebeck coefficient for all wire diameters was obtained when the Sb concentration was 5 at.%. The effective mass approached zero near 5 at.% Sb, and the small effective mass led to a large subband shift in each band. Thus, a small effective mass enhances the quantum effect at a fixed wire diameter, even if wire boundary scattering is taken into account. |
| doi_str_mv | 10.1007/s11664-013-2564-5 |
| format | Article |
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Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobility ratio of L-point electrons to T-point holes in the nanowires are smaller than those in bulk Bi-Sb because the wire boundary scattering suppresses the mobilities of L-point electrons and heavy holes. The largest Seebeck coefficient for all wire diameters was obtained when the Sb concentration was 5 at.%. The effective mass approached zero near 5 at.% Sb, and the small effective mass led to a large subband shift in each band. Thus, a small effective mass enhances the quantum effect at a fixed wire diameter, even if wire boundary scattering is taken into account.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-013-2564-5</identifier><identifier>CODEN: JECMA5</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Applied sciences ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cross-disciplinary physics: materials science; rheology ; Electric properties ; Electronics ; Electronics and Microelectronics ; Exact sciences and technology ; Heat conductivity ; Instrumentation ; Materials Science ; Nanoscale materials and structures: fabrication and characterization ; Nanowires ; Optical and Electronic Materials ; Optoelectronic devices ; Other topics in nanoscale materials and structures ; Physics ; Quantum wires ; Semiconductor electronics. Microelectronics. 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Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobility ratio of L-point electrons to T-point holes in the nanowires are smaller than those in bulk Bi-Sb because the wire boundary scattering suppresses the mobilities of L-point electrons and heavy holes. The largest Seebeck coefficient for all wire diameters was obtained when the Sb concentration was 5 at.%. The effective mass approached zero near 5 at.% Sb, and the small effective mass led to a large subband shift in each band. Thus, a small effective mass enhances the quantum effect at a fixed wire diameter, even if wire boundary scattering is taken into account.</description><subject>Applied sciences</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electric properties</subject><subject>Electronics</subject><subject>Electronics and Microelectronics</subject><subject>Exact sciences and technology</subject><subject>Heat conductivity</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Nanoscale materials and structures: fabrication and characterization</subject><subject>Nanowires</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>Other topics in nanoscale materials and structures</subject><subject>Physics</subject><subject>Quantum wires</subject><subject>Semiconductor electronics. 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Wire boundary scattering slightly decreased the Seebeck coefficient of Bi-Sb nanowires. This effect is due to the observation that boundary scattering and the mobility ratio of L-point electrons to T-point holes in the nanowires are smaller than those in bulk Bi-Sb because the wire boundary scattering suppresses the mobilities of L-point electrons and heavy holes. The largest Seebeck coefficient for all wire diameters was obtained when the Sb concentration was 5 at.%. The effective mass approached zero near 5 at.% Sb, and the small effective mass led to a large subband shift in each band. Thus, a small effective mass enhances the quantum effect at a fixed wire diameter, even if wire boundary scattering is taken into account.</abstract><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11664-013-2564-5</doi><tpages>6</tpages></addata></record> |
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| subjects | Applied sciences Characterization and Evaluation of Materials Chemistry and Materials Science Cross-disciplinary physics: materials science rheology Electric properties Electronics Electronics and Microelectronics Exact sciences and technology Heat conductivity Instrumentation Materials Science Nanoscale materials and structures: fabrication and characterization Nanowires Optical and Electronic Materials Optoelectronic devices Other topics in nanoscale materials and structures Physics Quantum wires Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Solid State Physics Thermal energy |
| title | Numerical Analysis of the Boundary Scattering Effect on Transport Properties in Bi-Sb Nanowires |
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