Numerical Simulation of Third-Generation HgCdTe Detector Pixel Arrays
In this paper, we present a physics-based full 3-D numerical simulation model of third-generation infrared (IR) detector pixel arrays. The approach avoids geometrical simplifications typical of 1-D and 2-D models that can introduce errors which are difficult to quantify. We have used a finite-differ...
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| Veröffentlicht in: | IEEE journal of selected topics in quantum electronics 2013-09, Vol.19 (5), p.1-15 |
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| container_title | IEEE journal of selected topics in quantum electronics |
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| creator | Schuster, J. Pinkie, B. Tobin, S. Keasler, C. D'Orsogna, D. Bellotti, E. |
| description | In this paper, we present a physics-based full 3-D numerical simulation model of third-generation infrared (IR) detector pixel arrays. The approach avoids geometrical simplifications typical of 1-D and 2-D models that can introduce errors which are difficult to quantify. We have used a finite-difference time-domain technique to compute the optical characteristics including the reflectance and the carrier generation rate in the device. Subsequently, we employ the finite-element method to solve the drift-diffusion equations on a mixed-element grid to compute the electrical characteristics including the I(V) characteristics and quantum efficiency. Furthermore, we have used this model to study HgCdTe two-color detectors that operate in the medium-wave to long-wave IR and photovoltaic pixel arrays employing a photon-trapping structure realized with a periodic array of pillars that operate in the medium-wave IR. |
| doi_str_mv | 10.1109/JSTQE.2013.2256340 |
| format | Article |
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(IEEE) Sep/Oct 2013</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c328t-cbb849619397543a06676de6096b6a1e83e2f179690a543d0a223024f483af743</citedby><cites>FETCH-LOGICAL-c328t-cbb849619397543a06676de6096b6a1e83e2f179690a543d0a223024f483af743</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6504709$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/6504709$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Schuster, J.</creatorcontrib><creatorcontrib>Pinkie, B.</creatorcontrib><creatorcontrib>Tobin, S.</creatorcontrib><creatorcontrib>Keasler, C.</creatorcontrib><creatorcontrib>D'Orsogna, D.</creatorcontrib><creatorcontrib>Bellotti, E.</creatorcontrib><title>Numerical Simulation of Third-Generation HgCdTe Detector Pixel Arrays</title><title>IEEE journal of selected topics in quantum electronics</title><addtitle>JSTQE</addtitle><description>In this paper, we present a physics-based full 3-D numerical simulation model of third-generation infrared (IR) detector pixel arrays. 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| subjects | Arrays Computational modeling Computer simulation Detectors Equations Infrared detectors Infrared radiation Intermetallics Materials Mathematical analysis Mathematical model Mathematical models mercury cadmium telluride multispectral detectors Numerical models numerical simulation photon-trapping photonic crystals photovoltaic detectors Pixels Time-domain analysis two-color detectors |
| title | Numerical Simulation of Third-Generation HgCdTe Detector Pixel Arrays |
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