An economic CVD technique for pure SnO2 thin films deposition: Temperature effects
A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and tra...
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| Veröffentlicht in: | Bulletin of materials science 2013-04, Vol.36 (2), p.217-221 |
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| creator | MALEKI, M ROZATI, S M |
| description | A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 °C was about 27 Ω/cm
2
. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature. |
| doi_str_mv | 10.1007/s12034-013-0460-5 |
| format | Article |
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2
. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature.</description><identifier>ISSN: 0250-4707</identifier><identifier>EISSN: 0973-7669</identifier><identifier>DOI: 10.1007/s12034-013-0460-5</identifier><language>eng</language><publisher>India: Springer-Verlag</publisher><subject>Atmospheric pressure ; Carrier density ; Casting ; Chemical vapor deposition ; Chemistry and Materials Science ; Electrical properties ; Electrical resistivity ; Engineering ; Glass substrates ; Grain size ; Materials Science ; Oxidation ; Oxide coatings ; Parameter modification ; Photomicrographs ; Preferred orientation ; Substrates ; Temperature effects ; Thin films ; Tin ; Tin dioxide ; Tin oxides</subject><ispartof>Bulletin of materials science, 2013-04, Vol.36 (2), p.217-221</ispartof><rights>Indian Academy of Sciences 2013</rights><rights>Indian Academy of Sciences 2013.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://www.proquest.com/docview/1357126622/fulltextPDF?pq-origsite=primo$$EPDF$$P50$$Gproquest$$H</linktopdf><linktohtml>$$Uhttps://www.proquest.com/docview/1357126622?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>315,781,785,21393,27929,27930,33749,41493,42562,43810,51324,64390,64394,72474,74307</link.rule.ids></links><search><creatorcontrib>MALEKI, M</creatorcontrib><creatorcontrib>ROZATI, S M</creatorcontrib><title>An economic CVD technique for pure SnO2 thin films deposition: Temperature effects</title><title>Bulletin of materials science</title><addtitle>Bull Mater Sci</addtitle><description>A modified new method of CVD for formation of pure layers of tin oxide films was developed. This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 °C was about 27 Ω/cm
2
. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature.</description><subject>Atmospheric pressure</subject><subject>Carrier density</subject><subject>Casting</subject><subject>Chemical vapor deposition</subject><subject>Chemistry and Materials Science</subject><subject>Electrical properties</subject><subject>Electrical resistivity</subject><subject>Engineering</subject><subject>Glass substrates</subject><subject>Grain size</subject><subject>Materials Science</subject><subject>Oxidation</subject><subject>Oxide coatings</subject><subject>Parameter modification</subject><subject>Photomicrographs</subject><subject>Preferred orientation</subject><subject>Substrates</subject><subject>Temperature effects</subject><subject>Thin films</subject><subject>Tin</subject><subject>Tin dioxide</subject><subject>Tin oxides</subject><issn>0250-4707</issn><issn>0973-7669</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNpNkE1LAzEURYMoWKs_wF3AdfQleZk47kr9hEJBq9uQZhI7pU3GSfr_naEuXN27OLx3OYRcc7jlAPoucwESGXDJACtg6oRMoNaS6aqqT4cuFDDUoM_JRc5bAF4j8gl5n0XqXYpp3zo6_3qkxbtNbH8OnobU0-7Qe_oRl4KWTRtpaHf7TBvfpdyWNsUHuvL7zve2jJwPwbuSL8lZsLvsr_5ySj6fn1bzV7ZYvrzNZwvWcVUVxtE2daMEWhuwaRSu14AyoHD2vlYS0dfKghyGaxQIlRTeOQlOBic0gJVTcnO82_Vp2JuL2aZDH4eXhkuluagqIQZKHKnc9W389v0_CszozhzdmcGdGd0ZJX8BbDNgeA</recordid><startdate>20130401</startdate><enddate>20130401</enddate><creator>MALEKI, M</creator><creator>ROZATI, S M</creator><general>Springer-Verlag</general><general>Springer Nature B.V</general><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope></search><sort><creationdate>20130401</creationdate><title>An economic CVD technique for pure SnO2 thin films deposition: Temperature effects</title><author>MALEKI, M ; 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This method is very simple and inexpensive and produces films with good electrical properties. The effect of substrate temperature on the sheet resistance, resistivity, mobility, carrier concentration and transparency of the films has been studied. The best sheet resistance obtained at substrate temperature of 500 °C was about 27 Ω/cm
2
. X-ray diffraction showed that the structure of deposited films was polycrystalline with a grain size between 150–300 Å. The preferred orientation was (211) for films deposited at substrate temperature of about 500 °C. FESEM micrographs revealed that substrate temperature is an important factor for increasing grain size and modifies electrical parameters. UV-visible measurement showed reduction of transparency and bandgap of the layers with increasing substrate temperature.</abstract><cop>India</cop><pub>Springer-Verlag</pub><doi>10.1007/s12034-013-0460-5</doi><tpages>5</tpages></addata></record> |
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| ispartof | Bulletin of materials science, 2013-04, Vol.36 (2), p.217-221 |
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| language | eng |
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| source | Elektronische Zeitschriftenbibliothek - Frei zugängliche E-Journals; SpringerNature Journals; Indian Academy of Sciences; ProQuest Central UK/Ireland; Free Full-Text Journals in Chemistry; ProQuest Central |
| subjects | Atmospheric pressure Carrier density Casting Chemical vapor deposition Chemistry and Materials Science Electrical properties Electrical resistivity Engineering Glass substrates Grain size Materials Science Oxidation Oxide coatings Parameter modification Photomicrographs Preferred orientation Substrates Temperature effects Thin films Tin Tin dioxide Tin oxides |
| title | An economic CVD technique for pure SnO2 thin films deposition: Temperature effects |
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