Diffusion Kinetics of Indium in TiO^sub 2^ (Rutile)

This work determines the self-diffusion coefficients of indium in TiO... single crystal (rutile). Diffusion concentration profiles were imposed by deposition of a thin surface layer of InCl... on the TiO... single crystal and subsequent annealing in the temperature range 1073-1573 K. The diffusion-induced concentration profiles of indium as a function of depth were determined using secondary ion mass spectrometry (SIMS). These diffusion profiles were used to calculate the self-diffusion coefficients of indium in the polycrystalline In...TiO... surface layer and the TiO... single crystal. The temperature dependence of the respective diffusion coefficients, in the range 1073-1573 K, can be expressed by the following formulas: ... and ... The obtained activation energy for bulk diffusion of indium in rutile (316 kJ/mol) is similar to that of zirconium in rutile (325 kJ/mol). The determined diffusion data can be used in selection of optimal processing conditions for TiO2-In2O3 solid solutions. (ProQuest: ... denotes formulae/symbols omitted.)