Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects

We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explai...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2013-05, Vol.7 (5), p.344-347
Hauptverfasser:	Bardoux, R., Funato, M., Kaneta, A., Kawakami, Y., Kikuchi, A., Kishino, K.
Format:	Artikel
Sprache:	eng
Schlagworte:	anti-Stokes emission Auger recombination InGaN nitride semiconductors Quantum dots Quantum physics two-photon absorption
Online-Zugang:	Volltext
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