Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects
We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explai...
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| Veröffentlicht in: | Physica status solidi. PSS-RRL. Rapid research letters 2013-05, Vol.7 (5), p.344-347 |
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| container_title | Physica status solidi. PSS-RRL. Rapid research letters |
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| creator | Bardoux, R. Funato, M. Kaneta, A. Kawakami, Y. Kikuchi, A. Kishino, K. |
| description | We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explain the origin of anti‐Stokes emissions and the preferential excitation of 0D objects at the expense of their surroundings. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The experimental results of the authors reveal that crossed‐transitions are the key point to understand phenomena related to two‐photon absorption in quantum dot systems. The combined effects of Auger recombination and crossed transitions explain the preferential excitation of 0D objects at the expense of their surroundings and the origin of anti‐Stokes recombination that was observed under two‐photon absorption spectroscopy. |
| doi_str_mv | 10.1002/pssr.201307067 |
| format | Article |
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The experimental results of the authors reveal that crossed‐transitions are the key point to understand phenomena related to two‐photon absorption in quantum dot systems. The combined effects of Auger recombination and crossed transitions explain the preferential excitation of 0D objects at the expense of their surroundings and the origin of anti‐Stokes recombination that was observed under two‐photon absorption spectroscopy.</description><identifier>ISSN: 1862-6254</identifier><identifier>EISSN: 1862-6270</identifier><identifier>DOI: 10.1002/pssr.201307067</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>anti-Stokes emission ; Auger recombination ; InGaN ; nitride semiconductors ; Quantum dots ; Quantum physics ; two-photon absorption</subject><ispartof>Physica status solidi. PSS-RRL. Rapid research letters, 2013-05, Vol.7 (5), p.344-347</ispartof><rights>Copyright © 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c4217-ac94583727fee6150b10266cc7d2f055ed2450d3b098acc49b2c69d4070042793</citedby><cites>FETCH-LOGICAL-c4217-ac94583727fee6150b10266cc7d2f055ed2450d3b098acc49b2c69d4070042793</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssr.201307067$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssr.201307067$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Bardoux, R.</creatorcontrib><creatorcontrib>Funato, M.</creatorcontrib><creatorcontrib>Kaneta, A.</creatorcontrib><creatorcontrib>Kawakami, Y.</creatorcontrib><creatorcontrib>Kikuchi, A.</creatorcontrib><creatorcontrib>Kishino, K.</creatorcontrib><title>Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects</title><title>Physica status solidi. PSS-RRL. Rapid research letters</title><addtitle>Phys. Status Solidi RRL</addtitle><description>We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explain the origin of anti‐Stokes emissions and the preferential excitation of 0D objects at the expense of their surroundings. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The experimental results of the authors reveal that crossed‐transitions are the key point to understand phenomena related to two‐photon absorption in quantum dot systems. The combined effects of Auger recombination and crossed transitions explain the preferential excitation of 0D objects at the expense of their surroundings and the origin of anti‐Stokes recombination that was observed under two‐photon absorption spectroscopy.</description><subject>anti-Stokes emission</subject><subject>Auger recombination</subject><subject>InGaN</subject><subject>nitride semiconductors</subject><subject>Quantum dots</subject><subject>Quantum physics</subject><subject>two-photon absorption</subject><issn>1862-6254</issn><issn>1862-6270</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2013</creationdate><recordtype>article</recordtype><recordid>eNqFkEtPwzAQhCMEEqVw5RyJs9u1Y8fNsSoQiqKC2iK4WYnjgPuI0zhR6b_HVVDFjdOONPPtasfzbjEMMAAZVtbWAwI4AA4hP_N6eBQSFBIO5yfN6KV3Ze0KgEWcBj1PLPcGVV-mMaWfZtbUVaOd1GXeSpX7adlotGjMWllfbbW1nelbXX5ulD8t43Q2jMczf9e6aLtFuWnQRq-Vb7KVko299i6KdGPVze_se2-PD8vJE0pe4ulknCBJCeYolRFlo4ATXigVYgYZBhKGUvKcFMCYygllkAcZRKNUShplRIZRTt2rQAmPgr531-2tarNrlW3EyrR16U4KHDDgjLEQXGrQpWRtXFuqEFWtt2l9EBjEsURxLFGcSnRA1AF7vVGHf9LidbGY_2VRx2rbqO8Tm9Zr4VzOxPssFkl0P2fPjx8iCX4AyLyFNA</recordid><startdate>201305</startdate><enddate>201305</enddate><creator>Bardoux, R.</creator><creator>Funato, M.</creator><creator>Kaneta, A.</creator><creator>Kawakami, Y.</creator><creator>Kikuchi, A.</creator><creator>Kishino, K.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7U5</scope><scope>8FD</scope><scope>L7M</scope></search><sort><creationdate>201305</creationdate><title>Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects</title><author>Bardoux, R. ; Funato, M. ; Kaneta, A. ; Kawakami, Y. ; Kikuchi, A. ; Kishino, K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c4217-ac94583727fee6150b10266cc7d2f055ed2450d3b098acc49b2c69d4070042793</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2013</creationdate><topic>anti-Stokes emission</topic><topic>Auger recombination</topic><topic>InGaN</topic><topic>nitride semiconductors</topic><topic>Quantum dots</topic><topic>Quantum physics</topic><topic>two-photon absorption</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Bardoux, R.</creatorcontrib><creatorcontrib>Funato, M.</creatorcontrib><creatorcontrib>Kaneta, A.</creatorcontrib><creatorcontrib>Kawakami, Y.</creatorcontrib><creatorcontrib>Kikuchi, A.</creatorcontrib><creatorcontrib>Kishino, K.</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Bardoux, R.</au><au>Funato, M.</au><au>Kaneta, A.</au><au>Kawakami, Y.</au><au>Kikuchi, A.</au><au>Kishino, K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects</atitle><jtitle>Physica status solidi. PSS-RRL. Rapid research letters</jtitle><addtitle>Phys. Status Solidi RRL</addtitle><date>2013-05</date><risdate>2013</risdate><volume>7</volume><issue>5</issue><spage>344</spage><epage>347</epage><pages>344-347</pages><issn>1862-6254</issn><eissn>1862-6270</eissn><abstract>We observed crossed transitions and anti‐Stokes emissions in single quantum‐dot‐like objects embedded in the active layer of InGaN/GaN quantum disks by two‐photon absorption techniques. We proposed a phenomenological model based on the interplay between Auger effect and crossed transitions to explain the origin of anti‐Stokes emissions and the preferential excitation of 0D objects at the expense of their surroundings. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
The experimental results of the authors reveal that crossed‐transitions are the key point to understand phenomena related to two‐photon absorption in quantum dot systems. The combined effects of Auger recombination and crossed transitions explain the preferential excitation of 0D objects at the expense of their surroundings and the origin of anti‐Stokes recombination that was observed under two‐photon absorption spectroscopy.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssr.201307067</doi><tpages>4</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | anti-Stokes emission Auger recombination InGaN nitride semiconductors Quantum dots Quantum physics two-photon absorption |
| title | Two-photon absorption induced anti-Stokes emission in single InGaN/GAN quantum-dot-like objects |
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