High performance Zn-Sn-O thin film transistors with Cu source/drain electrode

Zn–Sn–O (ZTO) thin film transistors (TFTs) were fabricated with a Cu source/drain electrode. Although a reasonably high mobility (μFE) of 13.2 cm2/Vs was obtained for the ZTO TFTs, the subthreshold gate swing (SS) and threshold voltage (Vth) of 1.1 V/decade and 9.1 V, respectively, were inferior. Ho...

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Veröffentlicht in:	Physica status solidi. PSS-RRL. Rapid research letters 2013-03, Vol.7 (3), p.196-198
Hauptverfasser:	Lee, Chul-Kyu, Park, Se Yeob, Jung, Hong Yoon, Lee, Chang-Kyu, Son, Byeong-Geun, Kim, Hyo Jin, Lee, Young-Joo, Joo, Young-Chang, Jeong, Jae Kyeong
Format:	Artikel
Sprache:	eng
Schlagworte:	copper diffusion barriers Electrodes Physics sputtering Thin films thin-film transistors Transistors zinc tin oxide
Online-Zugang:	Volltext
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