Reduction of mechanical stresses in GaN/sapphire templates via formation of regular porous structure

Reduction of mechanical stresses generated at a GaN/sapphire interface is an important issue on the way to more reliable and mechanically stable templates for manufacturing of efficient light‐emitting diodes. One of the techniques to reduce such stresses is the formation of the patterned porous stru...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. C 2012-03, Vol.9 (3-4), p.1057-1059
Hauptverfasser:	Ivukin, Ivan N., Bougrov, Vladislav E., Odnoblyudov, Maxim A., Romanov, Alexey E.
Format:	Artikel
Sprache:	eng
Schlagworte:	GaN pores sapphire stress reduction template
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!