Laser lift-off of AlN/sapphire for UV light-emitting diodes

Laser lift-off of AlN/sapphire for UV light-emitting diodes

We report on laser lift‐off (LLO) of AlN/sapphire for UV light‐emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/sapphire. We fabricated thin‐film‐flip‐chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was...

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Veröffentlicht in:Physica status solidi. C 2012-03, Vol.9 (3-4), p.753-756
Hauptverfasser: Aoshima, Hiroki, Takeda, Kenichiro, Takehara, Kosuke, Ito, Shun, Mori, Mikiko, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu, Amano, Hiroshi
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laser lift-off
UV LED
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container_issue 3-4
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container_title Physica status solidi. C
container_volume 9
creator Aoshima, Hiroki
Takeda, Kenichiro
Takehara, Kosuke
Ito, Shun
Mori, Mikiko
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Amano, Hiroshi
description We report on laser lift‐off (LLO) of AlN/sapphire for UV light‐emitting diodes (LEDs). Underfill between chip and submount is a key factor for the successful LLO of AlN/sapphire. We fabricated thin‐film‐flip‐chip UV LEDs with a peak wavelength of 343 nm using the LLO. Moreover surface texturing was carried out on the exfoliated AlN surface. The light output power from the UV LED after the LLO and the surface texture at exfoliated surface is 1.7 times higher than that before the LLO at 20 mA (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201100491
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subjects laser lift-off
UV LED
title Laser lift-off of AlN/sapphire for UV light-emitting diodes
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