Determination of dislocation densities in InN

The magneto‐transport measurements, carried out at magnetic fields up to 11 T and in the temperature range between 1.8 K and 300 K, are used to investigate the scattering mechanisms in GaN/InN/AlN double heterojunctions. Theoretical modeling is based on a variational approach to solving Boltzmann tr...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. C 2012-03, Vol.9 (3-4), p.997-1000
Hauptverfasser:	Ardali, Sukru, Tiras, Engin, Gunes, Mustafa, Balkan, Naci, Ajagunna, Adebowale Olufunso, Iliopoulos, Eleftherios, Georgakilas, Alexandros
Format:	Artikel
Sprache:	eng
Schlagworte:	dislocation density Hall carrier indium nitrides mobility
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!