Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy

Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy

This work is dedicated to the growth of GaN layers by molecular beam epitaxy. Plasma assisted and ammonia growth techniques are compared. The influence of the nitrogen source (NH3 or N2 plasma) as well as its flow rate is investigated. In particular, we show how the amount of donors incorporated in...

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Veröffentlicht in:Physica status solidi. C 2012-03, Vol.9 (3-4), p.523-526
Hauptverfasser: Cordier, Yvon, Natali, Franck, Chmielowska, Magdalena, Leroux, Mathieu, Chaix, Catherine, Bouchaib, Pierre
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gallium nitride
molecular beam epitaxy
residual doping
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container_end_page 526
container_issue 3-4
container_start_page 523
container_title Physica status solidi. C
container_volume 9
creator Cordier, Yvon
Natali, Franck
Chmielowska, Magdalena
Leroux, Mathieu
Chaix, Catherine
Bouchaib, Pierre
description This work is dedicated to the growth of GaN layers by molecular beam epitaxy. Plasma assisted and ammonia growth techniques are compared. The influence of the nitrogen source (NH3 or N2 plasma) as well as its flow rate is investigated. In particular, we show how the amount of donors incorporated in the layers depends on the growth conditions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
doi_str_mv 10.1002/pssc.201100375
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source Wiley Online Library Journals Frontfile Complete
subjects gallium nitride
molecular beam epitaxy
residual doping
title Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy
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