Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy

Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy

This work is dedicated to the growth of GaN layers by molecular beam epitaxy. Plasma assisted and ammonia growth techniques are compared. The influence of the nitrogen source (NH3 or N2 plasma) as well as its flow rate is investigated. In particular, we show how the amount of donors incorporated in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Physica status solidi. C 2012-03, Vol.9 (3-4), p.523-526
Hauptverfasser: Cordier, Yvon, Natali, Franck, Chmielowska, Magdalena, Leroux, Mathieu, Chaix, Catherine, Bouchaib, Pierre
Format: Artikel
Sprache:eng
Schlagworte:
gallium nitride
molecular beam epitaxy
residual doping
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:This work is dedicated to the growth of GaN layers by molecular beam epitaxy. Plasma assisted and ammonia growth techniques are compared. The influence of the nitrogen source (NH3 or N2 plasma) as well as its flow rate is investigated. In particular, we show how the amount of donors incorporated in the layers depends on the growth conditions. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1862-6351
1610-1642
DOI:10.1002/pssc.201100375