Integrated high reflectivity silicon substrates for GaN LEDs

Growth of GaN on epitaxial distributed Bragg reflectors (DBR) capable of 80% reflectivity at typical III‐N based LED operating wavelengths is presented. Such structures are formed by growing single crystal multilayers of gadolinium oxide‐silicon stacks on silicon (111) substrates. The large refracti...

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Veröffentlicht in:	Physica status solidi. C 2012-03, Vol.9 (3-4), p.814-817
Hauptverfasser:	Arkun, F. Erdem, Dargis, Rytis, Smith, Robin, Williams, David, Clark, Andrew, Lebby, Michael
Format:	Artikel
Sprache:	eng
Schlagworte:	engineered substrate gallium nitride integrated mirror light emitting diode
Online-Zugang:	Volltext
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