On the impact of interfacial SiOx-layer on the passivation properties of PECVD synthesized aluminum oxide

The interface passivation of a ‐AlOx/a ‐SiNx:H stacks deposited on p‐type silicon by plasma enhanced chemical vapor deposition is investigated by means of charge carrier lifetime and surface photovoltage measurements. To control the quality of the interface, we performed different surface preparatio...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. C 2012-10, Vol.9 (10-11), p.2120-2123
Hauptverfasser:	Laades, Abdelazize, Sperlich, Hans-Peter, Bähr, Mario, Stürzebecher, Uta, Diaz Alvarez, Carlos A., Burkhardt, Markus, Angermann, Heike, Blech, Michael, Lawerenz, Alexander
Format:	Artikel
Sprache:	eng
Schlagworte:	a -SiNx:H AlOx interface passivation interface state density PECVD thermal stability wet chemical preconditioning
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!