Influence of the substrate thermal expansion coefficient on the morphology and elastic stress of CoSb3 thin films

During the post‐annealing and cooling process of CoSb3 thin films deposited on thermally oxidized Si(100) substrates, cracks occur at the surface of the films, which can be caused by the difference in thermal expansion coefficient of the substrate and the film. To investigate the crack formation, 40...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2013-01, Vol.210 (1), p.140-146
Hauptverfasser:	Daniel, M., Friedemann, M., Jöhrmann, N., Liebig, A., Donges, J., Hietschold, M., Beddies, G., Albrecht, M.
Format:	Artikel
Sprache:	eng
Schlagworte:	CoSb3 crack formation skutterudites thermal expansion coefficients thermal stability thermoelectricity
Online-Zugang:	Volltext
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