Electrically active defects at AlN/Si interface studied by DLTS and ESR

A combined deep‐level transient spectroscopy (DLTS) and electron spin resonance (ESR) study is performed to identify the electrically active defects at the AlN/Si (111) interface. It is shown that the density of deep‐level states not only depends on the thermal budget of the epitaxial deposition but...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2012-10, Vol.209 (10), p.1851-1856
Hauptverfasser:	Simoen, Eddy, Visalli, Domenica, Van Hove, Marleen, Leys, Maarten, Favia, Paola, Bender, Hugo, Borghs, Gustaaf, Nguyen, Ahn Puc Duc, Stesmans, Andre
Format:	Artikel
Sprache:	eng
Schlagworte:	deep-level transient spectroscopy electron spin resonance Electrons extended defects interface states
Online-Zugang:	Volltext
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