Characteristics and simulation analysis of GaN-based vertical light emitting diodes via wafer-level additional surface roughening process

We report the device characteristics of InGaN/GaN blue vertical light emitting diodes (VLEDs) by additional KOH surface roughening process through the wafer‐level fabrication/test, and their simulation analysis in terms of electrical and optical properties. The influence of additional KOH etching ti...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2012-06, Vol.209 (6), p.1168-1173
Hauptverfasser:	Bae, Seong-Ju, Choi, JeHyuk, Kim, Dong-Hyun, Ju, In-Chan, Shin, Chan-Soo, Ko, Chul-Gi, Yu, Jae Su
Format:	Artikel
Sprache:	eng
Schlagworte:	LED simulations Light emitting diodes light extraction efficiency Materials science surface roughening vertical light emitting diodes
Online-Zugang:	Volltext
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