Effect of H2O2 in passivation of n- and p-type 4H-SiC surfaces

Silicon carbide (SiC) presents many advantageous properties for electronic devices designed to work under extreme conditions such as high‐temperature (300–600 °C), high‐frequency, and high‐power. In addition, the formation of an insulating oxide layer (SiO2) by thermal oxidation is an attractive pro...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2012-04, Vol.209 (4), p.675-678
Hauptverfasser:	Palmieri, Rodrigo, Radtke, Cláudio, Boudinov, Henri, da Silva Jr, Eronides F.
Format:	Artikel
Sprache:	eng
Schlagworte:	hydrogen peroxide interface silicon carbide thermal oxidation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!