Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE
AlxGa1−xN epitaxial films grown on GaN/sapphire by atmospheric‐pressure metalorganic vapor phase epitaxy (AP‐MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of AlxGa1−xN w...
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| Veröffentlicht in: | Physica status solidi. A, Applications and materials science Applications and materials science, 2012-05, Vol.209 (5), p.977-983 |
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| container_title | Physica status solidi. A, Applications and materials science |
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| creator | Touré, A. Halidou, I. Benzarti, Z. Fouzri, A. Bchetnia, A. El Jani, B. |
| description | AlxGa1−xN epitaxial films grown on GaN/sapphire by atmospheric‐pressure metalorganic vapor phase epitaxy (AP‐MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of AlxGa1−xN was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high‐resolution X‐ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half‐maximum (FWHM) is observed with Al content. |
| doi_str_mv | 10.1002/pssa.201127529 |
| format | Article |
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Two groups of samples were grown. The aluminum (Al) solid composition of AlxGa1−xN was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high‐resolution X‐ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half‐maximum (FWHM) is observed with Al content.</description><identifier>ISSN: 1862-6300</identifier><identifier>EISSN: 1862-6319</identifier><identifier>DOI: 10.1002/pssa.201127529</identifier><language>eng</language><publisher>Berlin: WILEY-VCH Verlag</publisher><subject>AlGaN ; MOVPE ; photoluminescence ; Solids ; Studies ; X-ray diffractometry</subject><ispartof>Physica status solidi. A, Applications and materials science, 2012-05, Vol.209 (5), p.977-983</ispartof><rights>Copyright © 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fpssa.201127529$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fpssa.201127529$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,776,780,1411,27901,27902,45550,45551</link.rule.ids></links><search><creatorcontrib>Touré, A.</creatorcontrib><creatorcontrib>Halidou, I.</creatorcontrib><creatorcontrib>Benzarti, Z.</creatorcontrib><creatorcontrib>Fouzri, A.</creatorcontrib><creatorcontrib>Bchetnia, A.</creatorcontrib><creatorcontrib>El Jani, B.</creatorcontrib><title>Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE</title><title>Physica status solidi. A, Applications and materials science</title><addtitle>Phys. Status Solidi A</addtitle><description>AlxGa1−xN epitaxial films grown on GaN/sapphire by atmospheric‐pressure metalorganic vapor phase epitaxy (AP‐MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of AlxGa1−xN was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high‐resolution X‐ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half‐maximum (FWHM) is observed with Al content.</description><subject>AlGaN</subject><subject>MOVPE</subject><subject>photoluminescence</subject><subject>Solids</subject><subject>Studies</subject><subject>X-ray diffractometry</subject><issn>1862-6300</issn><issn>1862-6319</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNo9kF9PwjAUxRujiYi--tzE52lvyzr2CIQ_RgQSVB6bbuukOLbZljD8BD77Ef0kjmD2dM9N7jn35IfQLZB7IIQ-lNbKe0oAaODT8Ay1oMupxxmE540m5BJdWbshpON3AmihaLCWRsZOGf0lnS5yXKQ4K_a4l-G4yJ3KXS2rsYTf759qhlWpnay0zHCqs63F76bY5zg6YOm2hS3XdU7slUZZuzMKP8_fFsNrdJHKzKqb_9lGr6Phy2DiTefjx0Fv6um6dOgxoCpNJUlYEqkYSCpZErAQJCcBCyJOu5LFPOoqILGEOEx5EIQ-jwASyvyYsza6O-WWpvjcKevEptiZvH4pgFEKvBvWSW0Unq72OlMHURq9leYggIgjRHGEKBqIYrFc9pqt9nonr7ZOVY1Xmg_B646-WM3Gov-0Wk0my5Hosz-eynj9</recordid><startdate>201205</startdate><enddate>201205</enddate><creator>Touré, A.</creator><creator>Halidou, I.</creator><creator>Benzarti, Z.</creator><creator>Fouzri, A.</creator><creator>Bchetnia, A.</creator><creator>El Jani, B.</creator><general>WILEY-VCH Verlag</general><general>WILEY‐VCH Verlag</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>201205</creationdate><title>Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE</title><author>Touré, A. ; Halidou, I. ; Benzarti, Z. ; Fouzri, A. ; Bchetnia, A. ; El Jani, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i2019-312effa0d3dbec10fa3d7391a60737b628a3c6b8e10ca1c9f677956b11d235c63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2012</creationdate><topic>AlGaN</topic><topic>MOVPE</topic><topic>photoluminescence</topic><topic>Solids</topic><topic>Studies</topic><topic>X-ray diffractometry</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Touré, A.</creatorcontrib><creatorcontrib>Halidou, I.</creatorcontrib><creatorcontrib>Benzarti, Z.</creatorcontrib><creatorcontrib>Fouzri, A.</creatorcontrib><creatorcontrib>Bchetnia, A.</creatorcontrib><creatorcontrib>El Jani, B.</creatorcontrib><collection>Istex</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Physica status solidi. A, Applications and materials science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Touré, A.</au><au>Halidou, I.</au><au>Benzarti, Z.</au><au>Fouzri, A.</au><au>Bchetnia, A.</au><au>El Jani, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE</atitle><jtitle>Physica status solidi. A, Applications and materials science</jtitle><addtitle>Phys. Status Solidi A</addtitle><date>2012-05</date><risdate>2012</risdate><volume>209</volume><issue>5</issue><spage>977</spage><epage>983</epage><pages>977-983</pages><issn>1862-6300</issn><eissn>1862-6319</eissn><abstract>AlxGa1−xN epitaxial films grown on GaN/sapphire by atmospheric‐pressure metalorganic vapor phase epitaxy (AP‐MOVPE) using trimethylgallium (TMG) and trimethylaluminum (TMA) as group III precursors have been studied. Two groups of samples were grown. The aluminum (Al) solid composition of AlxGa1−xN was varied in the range from 0.03 to 0.20 by changing the molar flow ratio [TMA/(TMA + TMG)]. The effect of TMA flow rate, respectively, TMG flow rate, on the growth rate, and Al solid composition is discussed. The structural properties of the alloys have been investigated by high‐resolution X‐ray diffraction (HRXRD). The optical properties of these samples were investigated by photoluminescence (PL). It is found that on increasing Al solid composition, via an increase of the TMA flow rate, the structural quality is deteriorated and the growth efficiency decreases. On the other hand, when the TMG flow rate is reduced, a decrease of the full width at half‐maximum (FWHM) is observed with Al content.</abstract><cop>Berlin</cop><pub>WILEY-VCH Verlag</pub><doi>10.1002/pssa.201127529</doi><tpages>7</tpages></addata></record> |
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| source | Wiley Online Library Journals Frontfile Complete |
| subjects | AlGaN MOVPE photoluminescence Solids Studies X-ray diffractometry |
| title | Characterization of low Al content AlxGa1−xN epitaxial films grown by atmospheric-pressure MOVPE |
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